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MPFS250T 数据表(PDF) 13 Page - Microchip Technology |
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MPFS250T 数据表(HTML) 13 Page - Microchip Technology |
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13 / 128 page ![]() Condition Unit Max Min Symbol Parameter VDDIx = 1.35 V µA 86 52 Pad pull-down when VIN = 1.35 V VDDIx = 1.2 V µA 79 47 Pad pull-down when VIN = 1.2 V 1. Represents the die input capacitance at the pad (not the package). Table 7 • Minimum and Maximum Rise and Fall times Condition Maximum fre- quency Unit Max Min Symbol Parameter Not to exceed 1 μs 100 KHz ps 10% bit period 200 ps 2,3 TRISE TFALL Input rise time 1,4 Input fall time 1,4 Not to exceed 30 0 ns 400 KHz ps 12.5% bit period Not to exceed 50 ns 50 MHz ps 20% bit period 800 MHz ns 4 1. Voltage ramp must be monotonic. For single-ended IO standards, input rise time is specified from 10%–90% of VDDIx and input fall time is specified from 90%–10% of VDDIx. For voltage referenced and differential IO configurations, ramp times must always comply with I/O standard requirements to ensure compliance. 2. Input slew rates must be controlled to never exceed PAD overshoot/undershoot requirements. Input pad overshoot and undershoot specifications are shown in section Maximum Allowed Overshoot and Undershoot. 3. Rise and fall times in this table are for unterminated inputs. When inputs are terminated, minimum ramp time is not restricted. Recommended minimum ramp time is 25% of bit period, not to exceed a rate of 5 V/ns. 4. Ramp times must not exceed I/O standard requirements to ensure compliance. 5.2.2 Maximum Allowed Overshoot and Undershoot The following table lists the maximum AC input voltage (VIN) overshoot duration for HSIO. During transitions, input signals may overshoot and undershoot the voltage listed as follows. Input currents must be limited to less than 100 mA per latch-up specifications. The maximum overshoot duration is specified as a high-time percentage over the lifetime of the device. A DC signal is equivalent to 100% of the duty-cycle. Table 8 • Maximum Overshoot During Transitions for HSIO Condition (V) AC (VIN) Overshoot Duration as % at TJ = 100 °C 1.8 100 1.85 100 1.9 100 9 Microsemi Proprietary and Confidential. DS0147 Revision 1.0 DC Characteristics |
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