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STM32H7B3AI 数据表(PDF) 121 Page - STMicroelectronics |
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STM32H7B3AI 数据表(HTML) 121 Page - STMicroelectronics |
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121 / 238 page ![]() Speed Symbol Parameter conditions Min(1) Max(1) Unit 10 Fmax(2) Maximum frequency C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 85 MHz C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 35 C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 110 C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 40 C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 166 C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 100 tr/tf (3) Output high to low level fall time and output low to high level rise time C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 3.8 ns C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 6.9 C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 2.8 C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 5.2 C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 1.8 C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 3.3 11 Fmax(2) Maximum frequency C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 100 MHz C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 50 C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 133 C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 66 C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 220 C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 85 tr/tf (3) Output high to low level fall time and output low to high level rise time C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 3.3 ns C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 6.6 C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 2.4 C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 4.5 C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 1.5 C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 2.7 1. Guaranteed by design. 2. The maximum frequency is defined with the following conditions: (tr+tf) ≤ 2/3 T, skew ≤ 1/20 T, 45%<Duty cycle<55% 3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively. 4. Compensation system enabled. Output buffer timing characteristics (HSLV option enabled) Table 69. Output timing characteristics (HSLV ON) Speed Symbol Parameter conditions Min(1) Max(1) Unit 00 Fmax(2) Maximum frequency C=50 pF, 1.62 V≤VDD≤2.7 V - 10 MHz C=30 pF, 1.62 V≤VDD≤2.7 V - 10 C=10 pF, 1.62 V≤VDD≤2.7 V - 10 tr/tf(3) Output high to low level fall time and output low to high level rise time C=50 pF, 1.62 V≤VDD≤2.7 V - 11 ns C=30 pF, 1.62 V≤VDD≤2.7 V - 9 C=10 pF, 1.62 V≤VDD≤2.7 V - 6.6 STM32H7B3xI Operating conditions DS13139 - Rev 8 page 121/238 |
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