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H8S/2225 数据表(PDF) 1032 Page - Renesas Technology Corp |
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H8S/2225 数据表(HTML) 1032 Page - Renesas Technology Corp |
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1032 / 1071 page ![]() Section 27 Electrical Characteristics Rev. 5.00 Aug 08, 2006 page 946 of 982 REJ09B0054-0500 27.6.6 Flash Memory Characteristics Table 27.59 lists the flash memory characteristics. Table 27.59 Flash Memory Characteristics Conditions: VCC = 2.7 V to 3.6 V, AVCC = 2.7 V to 3.6 V, Vref = 2.7 V to AVCC, VSS = AVSS = 0 V, VCC = 3.0 V to 3.6 V (Programming/erasing operating voltage range),Ta = –20°C to +50°C (Programming/erasing operating temperature range; regular specifications) Item Symbol Min Typ Max Unit Test Conditions Programming time* 1 *2*4 tP 10 200 ms/128 bytes Erase time* 1 *3*5 tE 100 1200 ms/block Reprogramming count NWEC 100* 6 10000* 7 Times Data holding time* 8 tDRP 10 year Programming Wait time after SWE1 bit setting* 1 tsswe 11 µs Wait time after PSU1 bit setting* 1 tspsu 50 50 µs Wait time after P1 bit setting* 1 *4 tsp10 8 1012µs tsp30 28 30 32 µs 1 ≤ n ≤ 6 tsp200 198 200 202 µs 7 ≤ n ≤ 1000 Wait time after P1 bit clear* 1 tcp 55 µs Wait time after PSU1 bit clear* 1 tcpsu 55 µs Wait time after PV1 bit setting* 1 tspv 44 µs Wait time after H'FF dummy write* 1 tspvr 22 µs Wait time after PV1 bit clear* 1 tcpv 22 µs Wait time after SWE1 bit clear tcswe 100 100 µs Maximum programming count* 1 *4 N1 6* 4 Times N2 994* 4 |
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