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TNETX3100 数据表(PDF) 37 Page - Texas Instruments

部件名 TNETX3100
功能描述  ThunderSWITCHE 10-PORT 10-/100-MBIT/S ETHERNETE SWITCH
PDF  80 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TNETX3100 数据表(HTML) 37 Page - Texas Instruments

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TNETX3100
ThunderSWITCH10-PORT 10-/100-MBIT/S ETHERNETSWITCH
SPWS031D – JUNE 1997 – REVISED OCTOBER 1997
37
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
DRAM flag register at 0x00D8
BIT
7
6
5
4
3
2
1
0
DRAMACT
Reserved
DRAMFLAG
BIT
NAME
FUNCTION
7
DRAMACT
DRAM activity. DRAMACT contains the status of a DRAM test access read or write. When this activity bit
is high, the DRAM access is being performed. When this bit is low, the DRAM access is completed. After
a DRAM test-access buffer is read, the user detects a falling edge on DRAMACT before proceeding to use
the accessed data.
6–4
Reserved
Reserved
3–0
DRAMFLAG
DRAM flag. DRAMFLAG holds a value that maps to the flag field of a DRAM buffer when accessed in DRAM
test access mode.
DRAM address register at 0x00D9–0x00DB
BIT
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
R/W
DRAMADDRESS
BIT
NAME
FUNCTION
23
R/W
DRAM test access read/write. R/W determines whether the contents of channel 0’s FIFO, DRAMDATA, and
DRAMFLAG are read from DRAM or written to DRAM. When high, the write operation is performed. When
low, a read operation is performed.
22–0
DRAMADDRESS
DRAM starting-word address. DRAMADDRESS is a 23-bit DRAM address marking the starting word
location for a DRAM test-access buffer operation.
The DRAM address space (as used in this register) is not flat. It is partitioned in the following manner:
BIT
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved
DX02
RAS
DX02
CAS
DX01
RAS
DX01
CAS
DX00
RAS
DX00
CAS
RAS
CAS
BIT
NAME
FUNCTION
22
Reserved
Reserved
21
DX02
Extended address bit 2 (RAS)
20
DX02
Extended address bit 2 (CAS)
19
DX01
Extended address bit 1 (RAS)
18
DX01
Extended address bit 1 (CAS)
17
DX00
Extended address bit 0 (RAS)
16
DX00
Extended address bit 0 (CAS)
15–8
RAS
Row address for DRAM (most-significant bit = bit 15)
7–0
CAS
Column address for DRAM (most-significant bit = bit 7)



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