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SPEAR320S 数据表(PDF) 67 Page - STMicroelectronics |
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SPEAR320S 数据表(HTML) 67 Page - STMicroelectronics |
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67 / 113 page ![]() SPEAr320S Electrical characteristics Doc ID 022508 Rev 2 67/113 4 Electrical characteristics 4.1 Absolute maximum ratings This product contains devices to protect the inputs against damage due to high/low static voltages. However, it is advisable to take normal precaution to avoid application of any voltage higher/lower than the specified maximum/minimum rated voltages. Caution: Stresses above those listed in Table 33 may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. 4.2 Maximum power consumption Note: These values take into consideration the worst cases of process variation and voltage range and must be used to design the power supply section of the board. Table 33. Absolute maximum ratings Symbol Parameter Min Max Unit VDD 1.2 Supply voltage for the core - 0.3 1.44 V VDD 3.3 Supply voltage for the I/Os - 0.3 3.9 V VDD 2.5 Supply voltage for the analog blocks - 0.3 3 V VDD 1.8 Supply voltage for the DRAM interface - 0.3 2.16 V VDD RTC RTC supply voltage -0.3 2.16 V TSTG Storage temperature -55 150 °C Table 34. Maximum power consumption Symbol Description Max Unit IDD(1.2Vsupply) Current consumption of VDD 1.2 supply voltage for the core 400 mA IDD(1.8Vsupply) Current consumption of VDD 1.8 supply voltage for the DRAM interface (1) 1. Peak current with Linux memory test (50% write and 50% read) plus DMA reading memory. 150 mA IDD(RTC) Current consumption of RTC supply voltage 8 µA IDD(2.5Vsupply) Current consumption of 2.5V supply voltage for the analog blocks 30 mA IDD(3.3Vsupply) Current consumption of 3.3V supply voltage for the I/Os(2) 2. With 30 logic channels connected to the device and simultaneously switching at 10 MHz. 12 mA PD Maximum power consumption(3) 3. Based on bench measurements for worst case silicon under worst case operating conditions. Devices tested with operating system running, CPU and DDR2 running at 333 MHz, DDR2 driven by PLL2, SDRAM and all on-chip peripherals and internal modules enabled. 1.2 V current and power are primarily dependent on the applications running and the use of internal chip functions (DMA, USB, Ethernet, and so on). 3.3 V current and power are primarily dependent on the capacitive loading, frequency, and utilization of the external buses. 870 mW |
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