EDB8164B4PR-1DITF-R datasheet(49/152 Pages) MICRON

部件名	EDB8164B4PR-1DITF-R

功能描述	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

PDF	152 Pages

Scroll/Zoom	100%

制造商	MICRON [Micron Technology]

网页	http://www.micron.com

标志

49 / 152 page

Figure 22: tDQSCKDM Timing

Col addr

Bankn

col addr

READ

NOP

Tm + 1

Tm + 2

Tm + 3

Tm + 4

Tm + 5

Tm + 6

Tm + 7

Tm + 8

[9:0]

CMD

DQS#

DQS

RL = 5

Transitioning data

NOP

tDQSCKm

NOP

OUT A0

OUT A1

OUT A2

OUT A3

NOP

CK#

Col addr

Bank n

col addr

READ

NOP

Tn + 1

Tn + 2

Tn + 3

Tn + 4

Tn + 5

Tn + 6

Tn + 7

Tn + 8

[9:0]

CMD

DQS#

DQS

RL = 5

…1.6μs maximum

1.6μs maximum…

NOP

tDQSCKn

NOP

OUT A0

OUT A1

OUT A2

OUT A3

NOP

CK#

Notes:

1. tDQSCKDM = (tDQSCKn - tDQSCKm).

2. tDQSCKDM (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any

(tDQSCKn, tDQSCKm) pair within any 1.6

μs rolling window.

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

Burst READ Command

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

EDB8164B4PR-1DITF-R 数据表(PDF) 49 Page - Micron Technology

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