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EDB8164B4PR-1DITF-R 数据表(PDF) 73 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 73 Page - Micron Technology

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Figure 46: All-Bank REFRESH Operation
AB
PRECHARGE
NOP
T0
T1
T2
T3
T4
Tx
Tx + 1
Ty
Ty + 1
CK_c
CK_t
CA[9:0]
CMD
NOP
REFab
NOP
REFab
tRPab
tRFCab
tRFCab
NOP
Valid
NOP
Figure 47: Per-Bank REFRESH Operation
AB
PRECHARGE
REFRESH to bank 0
NOP
T0
T1
Tx
Tx + 1
Tx + 2
Ty
Ty + 1
Tz
Tz + 1
CK_c
CK_t
CA[9:0]
CMD
NOP
REFpb
NOP
REFpb
tRPab
tRFCpb
tRFCpb
NOP
ACTIVATE
NOP
Bank 1
Row A
Row A
REFRESH to bank 1
ACTIVATE command
to bank 1
Notes:
1. Prior to T0, the REFpb bank counter points to bank 0.
2. Operations to banks other than the bank being refreshed are supported during the
tRFCpb period.
SELF REFRESH Operation
The SELF REFRESH command can be used to retain data in the array, even if the rest of
the system is powered down. When in the self refresh mode, the device retains data
without external clocking. The device has a built-in timer to accommodate the SELF
REFRESH operation.
The SELF REFRESH command is executed by taking CKE LOW, CS_n LOW, CA0 LOW,
CA1 LOW, and CA2 HIGH at the rising edge of the clock. CKE must be HIGH during the
previous clock cycle. A NOP command must be driven in the clock cycle following the
POWER-DOWN command. Once the command is registered, CKE must be held LOW to
keep the device in self-refresh mode.
The mobile LPDDR2 device can operate in self refresh mode in both the standard and
extended temperature ranges. The device also manages self refresh power consumption
when the operating temperature changes, resulting in the lowest possible power con-
sumption across the operating temperature range (See IDD Specifications for details).
After the device has entered self refresh mode, all external signals other than CKE are
“Don’t Care.” For proper self refresh operation, power supply pins (VDD1, VDD2, and
VDDQ) must be at valid levels. VDDQ can be turned off during self refresh. If VDDQ is
turned off, VREFDQ must also be turned off. Prior to exiting self refresh, both VDDQ and
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
SELF REFRESH Operation
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
73
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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