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EDB8164B4PR-1DITF-R 数据表(PDF) 27 Page - Micron Technology |
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EDB8164B4PR-1DITF-R 数据表(HTML) 27 Page - Micron Technology |
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27 / 152 page ![]() Figure 11: Simplified State Diagram Power applied Resetting Self refreshing Refreshing Power-on Resetting MR reading Idle MR reading Active MR reading Active power-down Idle power-down Deep power-down Idle1 Active BST BST PR,PRA Precharging MR writing Writing Reading Reading with auto precharge Writing with auto precharge Resetting power-down RESET MRR MRR MRR WR RD PD PDX PDX PD DPDX DPD REF WRA RDA RD WR Automatic sequence Command sequence PR = PRECHARGE PRA = PRECHARGE ALL ACT = ACTIVATE WR(A) = WRITE (with auto precharge) RD(A) = READ (with auto precharge) BST = BURST TERMINATE RESET = RESET is achieved through MRW command MRW = MODE REGISTER WRITE MRR = MODE REGISTER READ PD = enter power-down PDX = exit power-down SREF = enter self refresh SREFX = exit self refresh DPD = enter deep power-down DPDX = exit deep power-down REF = REFRESH PR, PRA ACT Note: 1. All banks are precharged in the idle state. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Simplified State Diagram 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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