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EDB8164B4PR-1DITF-R 数据表(PDF) 12 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 12 Page - Micron Technology

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3. VDD2 and VDDQ are connected internally in the package.
4. The Quad die product IDD for each channel will be the sum of the IDD's for the state of
operation for each rank (CS) in the channel.
Table 5: IDD6 Full-Array Self Refresh Current at 45°C for Dual die product
VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V
PASR
Supply
Value
Unit
Parameters/Conditions
Full array
VDD1
400
μA
All devices in self refresh
CK_t = LOW, CK_c = HIGH;
CKE is LOW;
CA bus inputs are STABLE;
Data bus inputs are STABLE
VDDQVDDQ
1600
1/2 array
VDD1
320
VDDQVDDQ
1000
1/4 array
VDD1
260
VDDQVDDQ
600
1/8 array
VDD1
240
VDDQVDDQ
400
Note:
1. IDD6 45°C is the typical of the distribution of the arithmetic mean, Quad die product will
be double these values when all die are in self refresh mode.
Table 6: IDD6 Partial-Array Self Refresh Current at 85°C for Dual die product
VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V
PASR
Supply
Value
Unit
Parameters/Conditions
Full array
VDD1
1800
μA
All devices in self refresh
CK_t = LOW, CK_c = HIGH;
CKE is LOW;
CA bus inputs are STABLE;
Data bus inputs are STABLE
VDDQVDDQ
6400
1/2 array
VDD1
1300
VDDQVDDQ
4400
1/4 array
VDD1
1100
VDDQVDDQ
3400
1/8 array
VDD1
1000
VDDQVDDQ
2800
Note:
1. IDD6 85°C is the maximum of the distribution of the arithmetic mean, Quad die product
will be double these values when all die are in self refresh mode.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
IDD Specifications
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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