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EDB8164B4PR-1DITF-R 数据表(PDF) 74 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 74 Page - Micron Technology

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VREFDQ must be within their respective minimum/maximum operating ranges (see the
Single-Ended AC and DC Input Levels for DQ and DM table). VREFDQ can be at any level
between 0 and VDDQ; VREFCA can be at any level between 0 and VDD2 during self refresh.
Before exiting self refresh, VREFDQ and VREFCA must be within specified limits (See AC
and DC Logic Input Measurement Levels for Single-Ended Signals for details). After en-
tering self refresh mode, the device initiates at least one all-bank REFRESH command
internally during tCKESR. The clock is internally disabled during SELF REFRESH opera-
tion to save power. The device must remain in self refresh mode for at least tCKESR. The
user can change the external clock frequency or halt the external clock one clock after
self refresh entry is registered; however, the clock must be restarted and stable before
the device can exit SELF REFRESH operation.
Exiting self refresh requires a series of commands. First, the clock must be stable prior
to CKE returning HIGH. After the self refresh exit is registered, a minimum delay, at least
equal to the self refresh exit interval (tXSR), must be satisfied before a valid command
can be issued to the device. This provides completion time for any internal refresh in
progress. For proper operation, CKE must remain HIGH throughout tXSR. NOP com-
mands must be registered on each rising clock edge during tXSR.
Using self refresh mode introduces the possibility that an internally timed refresh event
could be missed when CKE is driven HIGH for exit from self refresh mode. Upon exiting
self refresh, at least one REFRESH command (one all-bank command or eight per-bank
commands) must be issued before issuing a subsequent SELF REFRESH command.
Figure 48: SELF REFRESH Operation
Exit
SR
Valid
NOP
NOP
Enter
SR
NOP
Enter self refresh mode
Input clock frequency can be changed
or clock can be stopped during self refresh.
Valid
tCKESR (MIN)
tXSR (MIN)
tIHCKE
tIHCKE
tISCKE
tISCKE
Exit self refresh mode
Don’t Care
2 t
(MIN)
CK
CK_t
CS_n
CK_c
CMD
CKE
Notes:
1. Input clock frequency can be changed or stopped during self refresh, provided that
upon exiting self-refresh, a minimum of two cycles of stable clocks are provided, and the
clock frequency is between the minimum and maximum frequencies for the particular
speed grade.
2. The device must be in the all banks idle state prior to entering self refresh mode.
3. tXSR begins at the rising edge of the clock after CKE is driven HIGH.
4. A valid command can be issued only after tXSR is satisfied. NOPs must be issued during
tXSR.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
SELF REFRESH Operation
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
74
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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