EDB8164B4PR-1DITF-R datasheet(36/152 Pages) MICRON

部件名	EDB8164B4PR-1DITF-R

功能描述	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

PDF	152 Pages

Scroll/Zoom	100%

制造商	MICRON [Micron Technology]

网页	http://www.micron.com

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Table 20: MR2 Op-Code Bit Definitions

Feature

Type

Definition

RL and WL

Write-only

OP[3:0]

0001b: RL3/WL1 (default)

0010b: RL4/WL2

0011b: RL5/WL2

0100b: RL6/WL3

0101b: RL7/WL4

0110b: RL8/WL4

All others: Reserved

Table 21: MR3 I/O Configuration 1 (MA[7:0] = 03h)

OP7

OP6

OP5

OP4

OP3

OP2

OP1

OP0

RFU

Table 22: MR3 Op-Code Bit Definitions

Feature

Type

Definition

Write-only

OP[3:0]

0000b: Reserved

0001b: 34.3 ohm typical

0010b: 40 ohm typical (default)

0011b: 48 ohm typical

0100b: 60 ohm typical

0101b: Reserved

0110b: 80 ohm typical

0111b: 120 ohm typical

All others: Reserved

Table 23: MR4 Device Temperature (MA[7:0] = 04h)

OP7

OP6

OP5

OP4

OP3

OP2

OP1

OP0

TUF

RFU

SDRAM refresh rate

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

Mode Register Definition

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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