EDB8164B4PR-1DITF-R datasheet(69/152 Pages) MICRON

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EDB8164B4PR-1DITF-R 数据表(PDF) 69 Page - Micron Technology

部件名	EDB8164B4PR-1DITF-R

功能描述	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

PDF	152 Pages

Scroll/Zoom	100%

制造商	MICRON [Micron Technology]

网页	http://www.micron.com

标志

69 / 152 page

Figure 42: Regular Distributed Refresh Pattern

0ms

32ms

64ms

96ms

tREFBW

tREFI

Notes:

1. Compared to repetitive burst REFRESH with subsequent REFRESH pause.

2. As an example, in a 1Gb LPDDR2 device at TC ≤ 85˚C, the distributed refresh pattern has

one REFRESH command per 7.8

μs; the burst refresh pattern has one REFRESH command

per 0.52

μs, followed by ≈ 30ms without any REFRESH command.

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

REFRESH Command

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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