EDB8164B4PR-1DITF-R datasheet(15/152 Pages) MICRON

部件名	EDB8164B4PR-1DITF-R

功能描述	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

PDF	152 Pages

Scroll/Zoom	100%

制造商	MICRON [Micron Technology]

网页	http://www.micron.com

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Table 8: IDD6 Partial-Array Self Refresh Current at 105°C Dual die for Dual die prodct

VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V

PASR

Supply

Value

Unit

Parameters/Conditions

Full array

VDD1

4800

μA

All devices in self refresh

CK_t = LOW, CK_c = HIGH;

CKE is LOW;

CA bus inputs are STABLE;

Data bus inputs are STABLE

VDDQVDDQ

28000

1/2 array

VDD1

3200

VDDQVDDQ

15600

1/4 array

VDD1

2200

VDDQVDDQ

9600

1/8 array

VDD1

1800

VDDQVDDQ

6400

Note:

1. IDD6 105°C is the maximum of the distribution of the arithmetic mean, Quad die product

will be double these values when all die are in self refresh mode.

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

IDD Specifications

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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