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EDB8164B4PR-1DITF-R 数据表(PDF) 7 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 7 Page - Micron Technology

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List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: S4 Configuration Addressing ............................................................................................................... 1
Table 3: Package Codes and Descriptions ......................................................................................................... 2
Table 4: IDD Specifications – Dual Die, Dual Channel ...................................................................................... 10
Table 5: IDD6 Full-Array Self Refresh Current at 45°C for Dual die product ........................................................ 12
Table 6: IDD6 Partial-Array Self Refresh Current at 85°C for Dual die product .................................................... 12
Table 7: IDD Specifications – Dual Die, Dual Channel ...................................................................................... 13
Table 8: IDD6 Partial-Array Self Refresh Current at 105°C Dual die for Dual die prodct ....................................... 15
Table 9: Ball/Pad Descriptions ....................................................................................................................... 24
Table 10: Initialization Timing Parameters ...................................................................................................... 30
Table 11: Power-Off Timing ............................................................................................................................ 31
Table 12: Mode Register Assignments ............................................................................................................. 32
Table 13: MR0 Device Information (MA[7:0] = 00h) ......................................................................................... 33
Table 14: MR0 Op-Code Bit Definitions .......................................................................................................... 33
Table 15: MR1 Device Feature 1 (MA[7:0] = 01h) .............................................................................................. 33
Table 16: MR1 Op-Code Bit Definitions .......................................................................................................... 33
Table 17: Burst Sequence by Burst Length (BL), Burst Type (BT), and Wrap Control (WC) ................................. 34
Table 18: No-Wrap Restrictions ...................................................................................................................... 35
Table 19: MR2 Device Feature 2 (MA[7:0] = 02h) .............................................................................................. 35
Table 20: MR2 Op-Code Bit Definitions .......................................................................................................... 36
Table 21: MR3 I/O Configuration 1 (MA[7:0] = 03h) ......................................................................................... 36
Table 22: MR3 Op-Code Bit Definitions .......................................................................................................... 36
Table 23: MR4 Device Temperature (MA[7:0] = 04h) ........................................................................................ 36
Table 24: MR4 Op-Code Bit Definitions .......................................................................................................... 37
Table 25: MR5 Basic Configuration 1 (MA[7:0] = 05h) ...................................................................................... 37
Table 26: MR5 Op-Code Bit Definitions .......................................................................................................... 37
Table 27: MR6 Basic Configuration 2 (MA[7:0] = 06h) ...................................................................................... 38
Table 28: MR6 Op-Code Bit Definitions .......................................................................................................... 38
Table 29: MR7 Basic Configuration 3 (MA[7:0] = 07h) ...................................................................................... 38
Table 30: MR7 Op-Code Bit Definitions .......................................................................................................... 38
Table 31: MR8 Basic Configuration 4 (MA[7:0] = 08h) ...................................................................................... 38
Table 32: MR8 Op-Code Bit Definitions .......................................................................................................... 38
Table 33: MR9 Test Mode (MA[7:0] = 09h) ....................................................................................................... 39
Table 34: MR10 Calibration (MA[7:0] = 0Ah) ................................................................................................... 39
Table 35: MR10 Op-Code Bit Definitions ........................................................................................................ 39
Table 36: MR[11:15] Reserved (MA[7:0] = 0Bh–0Fh) ......................................................................................... 40
Table 37: MR16 PASR Bank Mask (MA[7:0] = 010h) .......................................................................................... 40
Table 38: MR16 Op-Code Bit Definitions ........................................................................................................ 40
Table 39: MR16 Bank and OP corresponding table .......................................................................................... 40
Table 40: MR17 PASR Segment Mask (MA[7:0] = 011h) .................................................................................... 41
Table 41: MR17 PASR Segment Mask Definitions (1Gb - 8Gb only) ................................................................... 41
Table 42: MR17 PASR Row Address Ranges in Masked Segments ...................................................................... 41
Table 43: Reserved Mode Registers ................................................................................................................. 42
Table 44: MR32 DQ Calibration Pattern A (MA[7:0] = 20H) ............................................................................... 42
Table 45: MR40 DQ Calibration Pattern B (MA[7:0] = 28H) ............................................................................... 42
Table 46: MR63 RESET (MA[7:0] = 3Fh) – MRW Only ....................................................................................... 42
Table 47: Bank Selection for PRECHARGE by Address Bits ............................................................................... 59
Table 48: PRECHARGE and Auto Precharge Clarification ................................................................................. 63
Table 49: REFRESH Command Scheduling Separation Requirements .............................................................. 65
Table 50: Bank and Segment Masking Example ............................................................................................... 75
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Features
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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