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EDB8164B4PR-1DITF-R 数据表(PDF) 83 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 83 Page - Micron Technology

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under Voltage Ramp and Initialization Sequence). The MRW RESET command can be
issued from the idle state. This command resets all mode registers to their default val-
ues. Only the NOP command is supported during tINIT4. After MRW RESET, boot tim-
ings must be observed until the device initialization sequence is complete and the de-
vice is in the idle state. Array data is undefined after the MRW RESET command has
completed. For MRW RESET timing, see Voltage Ramp and Initialization Sequence.
MRW ZQ Calibration Commands
The MRW command is used to initiate a ZQ calibration command that calibrates output
driver impedance across process, temperature, and voltage. LPDDR2-S4 devices sup-
port ZQ calibration. To achieve tighter tolerances, proper ZQ calibration must be per-
formed.
There are four ZQ calibration commands and related timings: tZQINIT, tZQRESET,
tZQCL, and tZQCS. tZQINIT is used for initialization calibration; tZQRESET is used for
resetting ZQ to the default output impedance; tZQCL is used for long calibration(s); and
tZQCS is used for short calibration(s). See the MR10 Calibration (MA[7:0] = 0Ah) table
for ZQ calibration command code definitions.
ZQINIT must be performed for LPDDR2 devices. ZQINIT provides an output impe-
dance accuracy of ±15%. After initialization, the ZQ calibration long (ZQCL) can be used
to recalibrate the system to an output impedance accuracy of ±15%. A ZQ calibration
short (ZQCS) can be used periodically to compensate for temperature and voltage drift
in the system.
ZQRESET resets the output impedance calibration to a default accuracy of ±30% across
process, voltage, and temperature. This command is used to ensure output impedance
accuracy to ±30% when ZQCS and ZQCL commands are not used.
One ZQCS command can effectively correct at least 1.5% (ZQ correction) of output im-
pedance errors within tZQCS for all speed bins if maximum sensitivities are met as
specified in Output Driver Sensitivity Definition and Output Driver Temperature and
Voltage Sensitivity. The appropriate interval between ZQCS commands can be deter-
mined using these tables and system-specific parameters.
Mobile LPDDR2 devices are subject to temperature drift rate (Tdriftrate) and voltage drift
rate (Vdriftrate) in various applications. To accommodate drift rates and calculate the
necessary interval between ZQCS commands, apply the following formula:
ZQ
correction
(T
sens × Tdriftrate) + (Vsens × Vdriftrate)
Where Tsens = MAX (dRONdT) and Vsens = MAX (dRONdV) define temperature and volt-
age sensitivities.
For example, if Tsens = 0.75%/˚C, Vsens = 0.20%/mV, Tdriftrate = 1˚C/sec, and Vdriftrate =
15 mV/sec, then the interval between ZQCS commands is calculated as:
1.5
(0.75 × 1) + (0.20 × 15)
= 0.4s
A ZQ calibration command can only be issued when the device is in the idle state with
all banks precharged.
No other activities can be performed on the data bus during calibration periods
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
MODE REGISTER WRITE Command
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
83
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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