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EDB8164B4PR-1DITF-R 数据表(PDF) 100 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 100 Page - Micron Technology

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Table 57: Current State Bank n to Command to Bank m Truth Table (Continued)
Notes 1–6 apply to all parameters and conditions
Current State
of Bank n
Command to Bank m Operation
Next State for Bank m
Notes
Reading
(auto precharge
disabled)
READ
Select column and start READ burst
from bank m
Reading
9
WRITE
Select column and start WRITE burst to
bank m
Writing
9, 14
ACTIVATE
Select and activate row in bank m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
Writing
(auto precharge
disabled)
READ
Select column and start READ burst
from bank m
Reading
9, 15
WRITE
Select column and start WRITE burst to
bank m
Writing
9
ACTIVATE
Select and activate row in bank m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
Reading with
auto precharge
READ
Select column and start READ burst
from bank m
Reading
9, 16
WRITE
Select column and start WRITE burst to
bank m
Writing
9, 14, 16
ACTIVATE
Select and activate row in bank m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
Writing with
auto precharge
READ
Select column and start READ burst
from bank m
Reading
9, 15, 16
WRITE
Select column and start WRITE burst to
bank m
Writing
9, 16
ACTIVATE
Select and activate row in bank m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
Power-on
RESET
Begin device auto initialization
Resetting
17, 18
Resetting
MRR
Read value from mode register
Resetting MR reading
Notes:
1. This table applies when: the previous state was self refresh or power-down; after tXSR
or tXP has been met; and both CKEn -1 and CKEn are HIGH.
2. All states and sequences not shown are illegal or reserved.
3. Current state definitions:
Idle: The bank has been precharged and tRP has been met.
Active: A row in the bank has been activated, tRCD has been met, no data bursts or ac-
cesses and no register accesses are in progress.
Read: A READ burst has been initiated with auto precharge disabled and the READ has
not yet terminated or been terminated.
Write: A WRITE burst has been initiated with auto precharge disabled and the WRITE
has not yet terminated or been terminated.
4. Refresh, self refresh, and MRW commands can be issued only when all banks are idle.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Truth Tables
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
100
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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