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EDB8164B4PR-1DITF-R 数据表(PDF) 134 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 134 Page - Micron Technology

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Table 91: AC Timing (Continued)
Notes 1–2 apply to all parameters and conditions. AC timing parameters must satisfy the tCK minimum conditions (in mul-
tiples of tCK) as well as the timing specifications when values for both are indicated.
Parameter
Symbol
Min/
Max
tCK
Min
Data Rate
Unit Notes
1066
933
800
667
533
400
333
DQS input low-level width
tDQSL
MIN
0.4
0.4
0.4
0.4
0.4
0.4
0.4
tCK
(avg)
DQS falling edge to CK setup time
tDSS
MIN
0.2
0.2
0.2
0.2
0.2
0.2
0.2
tCK
(avg)
DQS falling edge hold time from
CK
tDSH
MIN
0.2
0.2
0.2
0.2
0.2
0.2
0.2
tCK
(avg)
Write postamble
tWPST
MIN
0.4
0.4
0.4
0.4
0.4
0.4
0.4
tCK
(avg)
Write preamble
tWPRE
MIN
0.35
0.35
0.35
0.35
0.35
0.35
0.35
tCK
(avg)
CKE Input Parameters
CKE minimum pulse width (HIGH
and LOW pulse width)
tCKE
MIN
3
3
3
3
3
3
3
3
tCK
(avg)
CKE input setup time
tISCKE
MIN
0.25
0.25
0.25
0.25
0.25
0.25
0.25
tCK
(avg)
9
CKE input hold time
tIHCKE
MIN
0.25
0.25
0.25
0.25
0.25
0.25
0.25
tCK
(avg)
10
Command Address Input Parameters3
Address and control input setup
time ( Vref based )
tIS
MIN
220
250
290
370
460
600
740
ps
11
Address and control input hold
time ( Vref based )
tIH
MIN
220
250
290
370
460
600
740
ps
11
Address and control input pulse
width
tIPW
MIN
0.40
0.40
0.40
0.40
0.40
0.40
0.40
tCK
(avg)
Boot Parameters (10 MHz–55 MHz)12, 13, 14
Clock cycle time
tCKb
MAX
100
100
100
100
100
100
100
ns
MIN
18
181818181818
CKE input setup time
tISCKEb
MIN
2.5
2.5
2.5
2.5
2.5
2.5
2.5
ns
CKE input hold time
tIHCKEb
MIN
2.5
2.5
2.5
2.5
2.5
2.5
2.5
ns
Address and control input setup
time
tISb
MIN
1150
1150 1150 1150 1150 1150 1150
ps
Address and control input hold
time
tIHb
MIN
1150
1150 1150 1150 1150 1150 1150
ps
DQS output data access time from
CK_t/CK_c
tDQSCKb
MIN
2.0
2.0
2.0
2.0
2.0
2.0
2.0
ns
MAX
10.0
10.0
10.0
10.0
10.0
10.0
10.0
Data strobe edge to output data
edge tDQSQb - 1.2
tDQSQb
MAX
1.2
1.2
1.2
1.2
1.2
1.2
1.2
ns
Data hold skew factor
tQHSb
MAX
1.2
1.2
1.2
1.2
1.2
1.2
1.2
ns
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
AC Timing
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
134
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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