数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

26HS01GTAM03 数据表(PDF) 3 Page - Infineon Technologies AG

部件名 26HS01GTAM03
功能描述  256Mb/512Mb/1Gb SEMPER??Flash HYPERBUS??interface, 1.8V/3.0V
PDF  166 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

26HS01GTAM03 数据表(HTML) 3 Page - Infineon Technologies AG

  26HS01GTAM03 Datasheet HTML 1Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 2Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 3Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 4Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 5Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 6Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 7Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 8Page - Infineon Technologies AG 26HS01GTAM03 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 166 page
background image
Datasheet
3 of 166
002-12337 Rev. *Y
2022-01-18
256Mb/512Mb/1Gb SEMPER™ Flash
HYPERBUS™ interface, 1.8V/3.0V
Data integrity
Data integrity
Program / Erase (PE) endurance - high endurance (256KB sectors)
Sectors in partition
Minimum PE cycles
Minimum retention time
Unit
512 (Default for 1Gb devices)
2,560,000
2Years
508
2,540,000
504
2,520,000
...
...
256 (Default for 512Mb devices)
1,280,000
252
1,260,000
128 (Default for 256Mb devices)
640,000
...
28
140,000
24
120,000
20
100,000
Note Minimum cycles is for entire High Endurance Partition.
Program / Erase endurance - long retention partition (256KB sectors)
Minimum PE cycles
Minimum retention time
Unit
500
25
Years
Note Minimum cycles is for each sector.
Program / Erase endurance 4KB sector and nonvolatile register array
Flash memory type
Minimum cycles
Unit
Minimum retention
time
Unit
Program/Erase cycles per 4KB sector
500
PE cycles
25
Years
300,000
Note It is required to restrict the power
loss events to 300 times per sector during
program or erase operation to achieve the
mentioned endurance cycles.
2
Program/Erase cycles per Persistent Protection Bits (PPB)
array or nonvolatile register array
Note Each write transaction to a nonvolatile register
causes a PE cycle on the entire nonvolatile register array.
500
25



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com