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26HS01GTAM03 数据表(PDF) 9 Page - Infineon Technologies AG |
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26HS01GTAM03 数据表(HTML) 9 Page - Infineon Technologies AG |
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9 / 166 page ![]() Datasheet 9 of 166 002-12337 Rev. *Y 2022-01-18 256Mb/512Mb/1Gb SEMPER™ Flash HYPERBUS™ interface, 1.8V/3.0V Interface overview Figure 2 Logic block diagram The SEMPER™ Flash family consists of multiple densities with, 1.8V and 3.0V core and I/O voltage options. The device control logic is subdivided into two parallel operating sections: the Host Interface Controller (HIC) and the embedded algorithm controller (EAC). The HIC monitors signal levels on the device inputs and drives outputs as needed to complete read, program and write data transfers with the host system. The HIC delivers data from the currently entered address map on read transfers; places write transfer address and data information into the EAC command memory, and notifies the EAC of power transition, and write transfers. The EAC interrogates the command memory, after a program or write transfer, for legal command sequences and performs the related embedded algorithms (EA). Changing the nonvolatile data in the memory array requires a sequence of operations that are part of EA. The algorithms are managed entirely by the internal EAC. The main algorithms perform programming and erase of the main flash array data. The host system writes command codes to the flash device. The EAC receives the command, performs all the necessary steps to complete the transaction, and provides status information during the progress of an EA. In addition to the mandatory signals CS#, CK, SI/DQ0, SO/DQ1, DQ [7:2] and DS, the SEMPER™ Flash devices also include optional signals CK#, RESET#, INT# and RSTO#. When RESET# transitions from LOW to HIGH the device returns to the default state that occurs after an internal POR. The DS is synchronized with the output data during read transactions enabling host system to capture data at high clock frequency operation. The INT# is an open-drain output can provide an interrupt to the HYPERFLASH™ master to indicate when the HYPERFLASH™ transitions from busy to ready at the end of a program or erase operation or to indicate the detection of an ECC error during read. The RSTO# is an open-drain output used to indicate when a POR is occurring within the device and can be used as a system level reset signal. Upon completion of the internal POR the RSTO# signal will transition from LOW to HIGH impedance after a user defined timeout period has expired. Upon transition to the HIGH impedance state, the external pull-up resistance will pull RSTO# HIGH and the device immediately is placed into the Standby state. Infineon Endurance Flex architecture provides system designers the ability to customize SEMPER™ Flash’s endurance and retention for their specific application. The host defines partitions for high endurance or long retention, providing up to 1+ million cycles or 25 years of data retention. SEMPER™ Flash devices support error detection and correction by generating an embedded hamming ECC during memory array programming. This ECC code is then used for single-bit and double-bit error detection and single-bit correction during read. |
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