26HS01GTAM03 datasheet(2/166 Pages) INFINEON

2 / 166 page

Datasheet

2 of 166

002-12337 Rev. *Y

2022-01-18

256Mb/512Mb/1Gb SEMPER™ Flash

HYPERBUS™ interface, 1.8V/3.0V

Performance summary

-1Gb devices

• Minimum 2,560,000 program-erase cycles for the main array

• All devices

- Minimum 300,000 program-erase cycles for the 4KB sectors

- Minimum 25 years data retention

• Supply voltage

- 1.7V to 2.0V (HS-T)

- 2.7V to 3.6V (HL-T)

• Grade / temperature range

- Industrial (40°C to +85°C)

- Industrial plus (40°C to +105°C)

- Automotive AEC-Q100 grade 3 (40°C to +85°C)

- Automotive AEC-Q100 grade 2 (40°C to +105°C)

- Automotive AEC-Q100 grade 1 (40°C to +125°C)

•Packages

- 256Mb and 512Mb: 24-ball BGA 6  8 mm

- 1Gb: 24-ball BGA 8  8 mm

Performance summary

Maximum read rates

Transaction

Initial access latency (Cycles)

Clock rate (MHz)

MBps

SPI Read

6.25

SPI Fast Read

166

20.75

HYPERBUS™ Read DDR (HS-T)

200

400

HYPERBUS™ Read DDR (HL-T)

166

332

Typical Program and Erase rates

Operation

KBps

256B Page Programming (4KB Sector / 256KB Sector)

595 / 533

512B Page Programming (4KB Sector / 256KB Sector)

753 / 898

256KB Sector Erase

331

4KB Sector Erase

Typical current consumption

Operation

HL-T current (mA)

HS-T current (mA)

SDR Read 50MHz

DDR Read (HYPERBUS™)

75 (166MHz)

156 (200MHz)

Program

Erase

Standby (HS-T)

0.014

0.011

Deep Power Down (HS-T)

0.0022

0.0013

26HS01GTAM03 数据表(PDF) 2 Page - Infineon Technologies AG

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