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SPC58EG80C3 数据表(PDF) 57 Page - STMicroelectronics

部件名 SPC58EG80C3
功能描述  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  139 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SPC58EG80C3 数据表(HTML) 57 Page - STMicroelectronics

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DS11758 Rev 6
57/139
SPC584Gx, SPC58EGx, SPC58NGx
Electrical characteristics
57
DNL(6)
CC
P
Differential non-linearity
std. mode
Standard frequency mode,
VDD_HV_ADV > 4 V
VDD_HV_ADR_S > 4 V
–1
2
LSB
(10b)
T
High frequency mode,
VDD_HV_ADV > 4 V
VDD_HV_ADR_S > 4 V
–1
2
1. Minimum ADC sample times are dependent on adequate charge transfer from the external driving circuit to the internal
sample capacitor. The time constant of the entire circuit must allow the sampling capacitor to charge within 1/2 LSB within
the sampling window. Refer to Figure 8 for models of the internal ADC circuit, and the values to use in external RC sizing
and calculating the sampling window duration.
2. IADCREFH and IADCREFL are independent from ADC clock frequency. It depends on conversion rate: consumption is driven
by the transfer of charge between internal capacitances during the conversion.
3. Current parameter values are for a single ADC.
4. All channels of all SAR-ADC12bit and SAR-ADC10bit are impacted with same degradation, independently from the ADC
and the channel subject to current injection.
5. TUE is granted with injection current within the range defined in Table 26, for parameters classified as T and D.
6. DNL is granted with injection current within the range defined in Table 26, for parameters classified as T and D.
Table 28. ADC-Comparator electrical specification (continued)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Max



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