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数据搜索系统，热门电子元器件搜索 |
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SPC58EG80C3 数据表(PDF) 30 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 30 Page - STMicroelectronics |
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30 / 139 page  Electrical characteristics SPC584Gx, SPC58EGx, SPC58NGx 30/139 DS11758 Rev 6 Note: When the device enters into standby mode, the LP pads have the input buffer switched-on. As a consequence, if the pad input voltage VIN is VSS<VIN<VDD_HV, an additional consumption can be measured in the VDD_HV domain. The highest consumption can be ILKG CC P Pad input leakage VERY STRONG pads, TJ =150 °C — — 1,000 nA CP1 CC D Pad capacitance —— — 10 pF Vdrift CC D Input Vil/Vih temperature drift In a 1 ms period, with a temperature variation <30 °C —— 100 mV WFI SR C Wakeup input filtered pulse(1) —— — 20 ns WNFI SR C Wakeup input not filtered pulse(1) — 400 — — ns 1. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature. Table 11. I/O input electrical characteristics (continued) Symbol C Parameter Conditions Value Unit Min Typ Max Table 12. I/O pull-up/pull-down electrical characteristics Symbol C Parameter Conditions Value Unit Min Typ Max IWPU CC T Weak pull-up current absolute value VIN = 1.1 V(1) —— 130 μA P VIN = 0.69 * VDD_HV_IO(2) 15 — — RWPU CC D Weak Pull-up resistance VDD_HV_IO = 5.0 V ± 10% 33 — 93 K Ω RWPU CC D Weak Pull-up resistance VDD_HV_IO = 3.3 V ± 10% 19 — 62 K Ω IWPD CC T Weak pull- down current absolute value VIN = 0.69 * VDD_HV_IO(1) —— 130 μA P VIN = 0.9 V(2) 15 — — RWPD CC D Weak Pull- down resistance VDD_HV_IO = 5.0 V ± 10% 29 — 60 K Ω RWPD CC D Weak Pull- down resistance VDD_HV_IO = 3.3 V ± 10% 19 — 60 K Ω 1. Maximum current when forcing a change in the pin level opposite to the pull configuration. 2. Minimum current when keeping the same pin level state than the pull configuration. |
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