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SPC58EG80C3 数据表(PDF) 21 Page - STMicroelectronics

部件名 SPC58EG80C3
功能描述  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  139 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SPC58EG80C3 数据表(HTML) 21 Page - STMicroelectronics

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DS11758 Rev 6
21/139
SPC584Gx, SPC58EGx, SPC58NGx
Electrical characteristics
21
4.3.1
Power domains and power up/down sequencing
The following table shows the constraints and relationships for the different power domains.
Supply1 (on rows) can exceed Supply2 (on columns), only if the cell at the given row and
column is reporting ‘ok’. This limitation is valid during power-up and power-down phases, as
well as during normal device operation.
During power-up, all functional terminals are maintained in a known state as described in
the device pinout Microsoft Excel file attached to the IO_Definition document.
Table 6. PRAM wait states configuration
PRAMC WS
Clock Frequency (MHz)
1< 180
0< 120
Table 7. Device supply relation during power-up/power-down sequence
Supply2
VDD_LV
VDD_HV_IO_FLEX
VDD_HV_IO_MAIN
VDD_HV_FLA
VDD_HV_OSC
VDD_HV_ADV
VDD_HV_ADR
VDD_HV_IO_FLEX
ok
not allowed
ok
ok
VDD_LV(1)
ok
ok
ok
ok
VDD_HV_IO_MAIN
VDD_HV_FLA
VDD_HV_OSC
ok
ok
ok
ok
VDD_HV_ADV
ok
ok
not allowed
ok
VDD_HV_ADR
ok
ok
not allowed
not allowed
1. VDD_LV can be higher than VDD_HV supplies only during power-up/down transient ramps, in case of external LV regulator
and if VDD_HV supply voltage level is lower than VDD_LV allowed max operating condition.



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