SPC58EG80C3 datasheet(20/139 Pages) STMICROELECTRONICS

20 / 139 page

Electrical characteristics

SPC584Gx, SPC58EGx, SPC58NGx

20/139

DS11758 Rev 6

VSS_HV_ADR_S-

VSS_HV_ADV

VSS_HV_ADR_S

differential

voltage

—

–25

—

VRAMP_HV

Slew rate on

HV power

supply

——

—

100

V/ms

VIN

I/O input

voltage range

—0

—

5.5

IINJ1

Injection

current (per

pin) without

performance

degradation(8)

(9) (10)

Digital pins and

analog pins

–3.0

—

3.0

IINJ2

Dynamic

Injection

current (per

pin) with

performance

degradation(10)

(11)

Digital pins and

analog pins

–10

—

1. The ranges in this table are design targets and actual data may vary in the given range.

2. Maximum operating frequency is applicable to the cores and platform of the device. See the Clock Chapter in the

Microcontroller Reference Manual for more information on the clock limitations for the various IP blocks on the device.

3. In order to evaluate the actual difference between ambient and junction temperatures in the application, refer to

Section 5.4: Package thermal characteristics.

4. Core voltage as measured on device pin to guarantee published silicon performance.

5. In the range [1.14-1.08]V, the device functionality and specifications are granted and the device is expected to receive a

flag by the internal LVD100 monitors to warn that the regulator (internal or external), providing the VDD_LV supply, exited the

expected operating conditions. If the internal LVD100 monitors are disabled by the application, then an external voltage

monitor with minimum threshold of VDD_LV(min) = 1.08 V measured at the device pad, has to be implemented. Refer to

Section 4.15.3: Voltage monitors for the list of available internal monitors and to the Reference Manual for the

configurability of the monitors.

6. Core voltage can exceed 1.26 V with the limitations provided in Section 4.2: Absolute maximum ratings, provided that

HVD134_C monitor reset is disabled.

7. 1.260 V - 1.290 V range allowed periodically for supply with sinusoidal shape and average supply value below or equal to

1.236 V at the given temperature profile.

8. Full device lifetime. I/O and analog input specifications are only valid if the injection current on adjacent pins is within these

limits. See Section 4.2: Absolute maximum ratings for maximum input current for reliability requirements.

9. The I/O pins on the device are clamped to the I/O supply rails for ESD protection. When the voltage of the input pins is

above the supply rail, current will be injected through the clamp diode to the supply rails. For external RC network

calculation, assume typical 0.3 V drop across the active diode. The diode voltage drop varies with temperature.

10. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in

Section 4.8.3: I/O pad current specifications.

11. Positive and negative Dynamic current injection pulses are allowed up to this limit. I/O and ADC specifications are not

granted. See the dedicated chapters for the different specification limits. See the Absolute Maximum Ratings table for

maximum input current for reliability requirements. Refer to the following pulses definitions: Pulse1 (ISO 7637-2:2011),

Pulse 2a(ISO 7637-2:2011 5.6.2), Pulse 3a (ISO 7637-2:2011 5.6.3), Pulse 3b (ISO 7637-2:2011 5.6.3).

Table 5. Operating conditions (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

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