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数据搜索系统，热门电子元器件搜索 |
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SPC58EG80C3 数据表(PDF) 36 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 36 Page - STMicroelectronics |
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36 / 139 page  Electrical characteristics SPC584Gx, SPC58EGx, SPC58NGx 36/139 DS11758 Rev 6 4.8.3 I/O pad current specifications The I/O pads are distributed across the I/O supply segment. Each I/O supply segment is associated to a VDD/VSS supply pair as described in the device pinout Microsoft Excel file attached to the IO_Definition document. Table 17 provides I/O consumption figures. In order to ensure device reliability, the average current of the I/O on a single segment should remain below the IRMSSEG maximum value. In order to ensure device functionality, the sum of the dynamic and static current of the I/O on a single segment should remain below the IDYNSEG maximum value. Pad mapping on each segment can be optimized using the pad usage information provided on the I/O Signal Description table. Table 17. I/O consumption Symbol C Parameter Conditions Value(1) Unit Min Typ Max Average consumption(2) IRMSSEG SR D Sum of all the DC I/O current within a supply segment —— — 80 mA IRMS_W CC D RMS I/O current for WEAK configuration CL = 25 pF, 2 MHz, VDD =5.0 V ± 10 % —— 1.1 mA CL = 50 pF, 1 MHz, VDD =5.0 V ± 10 % —— 1.1 CL = 25 pF, 2 MHz, VDD =3.3 V ± 10 % —— 1.0 CL = 25 pF, 1 MHz, VDD = 3.3 V ± 10% —— 1.0 IRMS_M CC D RMS I/O current for MEDIUM configuration CL =25pF, 12MHz, VDD = 5.0 V ± 10% —— 5.5 mA CL = 50 pF, 6 MHz, VDD = 5.0 V ± 10% —— 5.5 CL =25pF, 12MHz, VDD = 3.3 V ± 10% —— 4.2 CL = 25 pF, 6 MHz, VDD = 3.3 V ± 10% —— 4.2 IRMS_S CC D RMS I/O current for STRONG configuration CL =25pF, 50MHz, VDD = 5.0 V ± 10% —— 21 mA CL =50pF, 25MHz, VDD = 5.0 V ± 10% —— 21 CL =25pF, 25MHz, VDD = 3.3 V ± 10% —— 10 CL =25pF, 12.5 MHz, VDD = 3.3 V ± 10% —— 10 |
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