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SPC58EG80C3 数据表(PDF) 29 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 29 Page - STMicroelectronics |
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29 / 139 page ![]() DS11758 Rev 6 29/139 SPC584Gx, SPC58EGx, SPC58NGx Electrical characteristics 38 Figure 3. I/O input electrical characteristics VIL VIN VIH VINTERNAL VDD VHYS (SIUL register) Table 11. I/O input electrical characteristics Symbol C Parameter Conditions Value Unit Min Typ Max TTL Vihttl SR P Input high level TTL —2 — VDD_HV_IO + 0.3 V Vilttl SR P Input low level TTL — –0.3 — 0.8 V Vhysttl CC C Input hysteresis TTL —0.3 — — V CMOS Vihcmos SR P Input high level CMOS —0.65 * VDD — VDD_HV_IO + 0.3 V Vilcmos SR P Input low level CMOS — –0.3 — 0.35 * VDD V Vhyscmos CC C Input hysteresis CMOS —0.10 * VDD —— V COMMON ILKG CC P Pad input leakage INPUT-ONLY pads TJ =150 °C —— 200 nA ILKG CC P Pad input leakage MEDIUM pads TJ =150 °C —— 360 nA ILKG CC P Pad input leakage STRONG pads TJ =150 °C — — 1,000 nA |
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