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SPC58EG80C3 数据表(PDF) 25 Page - STMicroelectronics

部件名 SPC58EG80C3
功能描述  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  139 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SPC58EG80C3 数据表(HTML) 25 Page - STMicroelectronics

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DS11758 Rev 6
25/139
SPC584Gx, SPC58EGx, SPC58NGx
Electrical characteristics
27
4.7
Device consumption
Table 9. Device consumption
Symbol
C
Parameter
Conditions
Value(1)
Unit
Min
Typ
Max
IDD_LKG(2),(3)
CC
C
Leakage current on the
VDD_LV supply
TJ =40°C
—
—
26
mA
DTJ =25°C
—
—
18
DTJ =55°C
—
—
36
DTJ =95°C
—
—
90
DTJ = 120 °C
—
—
160
PTJ = 150 °C
—
—
320
IDD_LV(3)
CC
P
Dynamic current on
the VDD_LV supply,
very high consumption
profile(4)
—
—
—
400
mA
IDD_HV
CC
P
Total current on the
VDD_HV supply(4)
fMAX
——
85
mA
IDD_LV_GW
CC
T
Dynamic current on
the VDD_LV supply,
gateway profile(5)
—
—
—
310
mA
IDD_HV_GW
CC
T
Dynamic current on
the VDD_HV supply,
gateway profile(5)
——
—
46
mA
IDD_LV_BCM
CC
T
Dynamic current on
the VDD_LV supply,
body profile(6)
—
—
—
280
mA
IDD_HV_BCM
CC
T
Dynamic current on
the VDD_HV supply,
body profile(6)
——
—
49
mA
IDD_MAIN_CORE_AC
CC
T
Main Core dynamic
current(7)
fMAX
——
50
mA
IDD_CHKR_CORE_AC
CC
T
Checker Core dynamic
operating current
fMAX
——
30
mA
IDD_HSM_AC
CC
T
HSM platform dynamic
operating current(8)
fMAX/2
—
—
20
mA
IDDHALT(9)
CC
T
Dynamic current on
the VDD_LV supply
+Total current on the
VDD_HV supply
—
—
110
180
mA
IDDSTOP(10)
CC
T
Dynamic current on
the VDD_LV supply
+Total current on the
VDD_HV supply
—
—
21
40
mA



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