SPC58EG80C3 datasheet(75/139 Pages) STMICROELECTRONICS

75 / 139 page

DS11758 Rev 6

75/139

SPC584Gx, SPC58EGx, SPC58NGx

Electrical characteristics

tpprogrameep

Page (256 bits) program time

EEPROM (partitions 2, 3, 4)

[Packaged part]

300

—

315

1300

µs

tqprogram

Quad Page (1024 bits)

program time

220

840

1200

850

2000

µs

tqprogrameep

Quad Page (1024 bits)

program time EEPROM

(partitions 2, 3, 4) [Packaged

part]

306

1200

1800

1270

2600

µs

t16kpperase

16 KB block pre-program and

erase time

190

450

500

250

1000

—

C ms

t32kpperase

32 KB block pre-program and

erase time

250

520

600

310

1200

—

C ms

t64kpperase

64 KB block pre-program and

erase time

360

700

750

420

1600

—

C ms

t128kpperase

128 KB block pre-program

and erase time

600

1300

1600

800

4000

—

C ms

t256kpperase

256 KB block pre-program

and erase time

1050 C

1800

2400

1600

4000

—

C ms

t16kprogram

16 KB block program time

1000

—

C ms

t32kprogram

32 KB block program time

100

1200

—

C ms

t64kprogram

64 KB block program time

102

175

200

150

1600

—

C ms

t128kprogram 128 KB block program time

205

350

430

300

2000

—

C ms

t256kprogram 256 KB block program time

410

700

850

590

4000

—

C ms

t64kprogrameep

Program 64 KB Data Flash -

EEPROM (partition 2,3)

[Packaged part]

120

200

300

330

2275

C ms

t64keraseeep

Erase 64 KB Data Flash -

EEPROM (partition 2,3)

[Packaged part]

530

910

1150

1040

4700

C ms

t16kprogrameep

Program 16 KB EEPROM

(partition 4) [KGD]

1750

C ms

t16keraseeep

Erase 16 KB EEPROM

(partition 4) [KGD]

225

645

715

520

3600

C ms

tprr

Program rate(8)

1.7

2.8

3.40

2.4

—

s/M

Table 41. Flash memory program and erase specifications (continued)

Symbol

Characteristics(1)(2)

Value

Unit

Typ(3) C

Initial max

Typical

end of

life(4)

Lifetime

max(5)

25 °C

(6)

All

temp

(7)

< 1 K

cycles

< 250 K

cycles

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