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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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SPC58EG80C3 数据表(PDF) 37 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 37 Page - STMicroelectronics |
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37 / 139 page  DS11758 Rev 6 37/139 SPC584Gx, SPC58EGx, SPC58NGx Electrical characteristics 38 IRMS_V CC D RMS I/O current for VERY STRONG configuration CL =25pF, 50MHz, VDD = 5.0 V ± 10% —— 23 mA CL =50pF, 25MHz, VDD = 5.0 V ± 10% —— 23 CL =25pF, 50MHz, VDD = 3.3 V ± 10% —— 16 CL =25pF, 25MHz, VDD = 3.3 V ± 10% —— 16 Dynamic consumption(3) IDYN_SEG SR D Sum of all the dynamic and DC I/O current within a supply segment VDD = 5.0 V ± 10% — — 195 mA VDD = 3.3 V ± 10% — — 150 IDYN_W CC D Dynamic I/O current for WEAK configuration CL =25pF, VDD =5.0 V ± 10% — — 16.7 mA CL =50pF, VDD =5.0 V ± 10% — — 16.8 CL =25pF, VDD =3.3 V ± 10% — — 12.9 CL =50pF, VDD =3.3 V ± 10% — — 12.9 IDYN_M CC D Dynamic I/O current for MEDIUM configuration CL =25pF, VDD =5.0 V ± 10% — — 18.2 mA CL =50pF, VDD =5.0 V ± 10% — — 18.4 CL =25pF, VDD =3.3 V ± 10% — — 14.3 CL =50pF, VDD =3.3 V ± 10% — — 16.4 IDYN_S CC D Dynamic I/O current for STRONG configuration CL =25pF, VDD =5.0 V ± 10% —— 57 mA CL =50pF, VDD =5.0 V ± 10% — — 63.5 CL =25pF, VDD =3.3 V ± 10% —— 31 CL =50pF, VDD =3.3 V ± 10% — — 33.5 Table 17. I/O consumption (continued) Symbol C Parameter Conditions Value(1) Unit Min Typ Max |
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