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SPC58EG80C3 数据表(PDF) 90 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 90 Page - STMicroelectronics |
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90 / 139 page ![]() Electrical characteristics SPC584Gx, SPC58EGx, SPC58NGx 90/139 DS11758 Rev 6 4tSDC CC D SCK duty cycle(6) SCK drive strength Very strong 0 pF 1/2tSCK –2 1/2tSCK +2 ns Strong 0 pF 1/2tSCK –2 1/2tSCK +2 Medium 0 pF 1/2tSCK –5 1/2tSCK +5 PCS strobe timing 5tPCSC CC D PCSx to PCSS time(7) PCS and PCSS drive strength Strong 25 pF 16.0 — ns 6tPASC CC D PCSS to PCSx time(7) PCS and PCSS drive strength Strong 25 pF 16.0 — ns SIN setup time 7tSUI CC D SIN setup time to SCK CPHA = 0(8) SCK drive strength Very strong 25pF 25–(P(9) ×tSYS(4))— ns Strong 50 pF 31 – (P(9) ×tSYS(4))— Medium 50 pF 52 – (P(9) ×tSYS(4))— SIN setup time to SCK CPHA = 1(8) SCK drive strength Very strong 25 pF 25.0 — ns Strong 50 pF 31.0 — Medium 50 pF 52.0 — SIN hold time 8tHI CC D SIN hold time from SCK CPHA = 0(8) SCK drive strength Very strong 0 pF –1 + (P(9) ×tSYS(3))— ns Strong 0pF –1+(P(9) ×tSYS(3))— Medium 0 pF –1 + (P(9) ×tSYS(3))— SIN hold time from SCK CPHA = 1(8) SCK drive strength Very strong 0 pF –1.0 — ns Strong 0 pF –1.0 — Medium 0 pF –1.0 — Table 48. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 (continued) # Symbol C Characteristic Condition Value(1) Unit Pad drive(2) Load (CL)Min Max |
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