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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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SPC58EG80C3 数据表(PDF) 38 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 38 Page - STMicroelectronics |
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38 / 139 page  Electrical characteristics SPC584Gx, SPC58EGx, SPC58NGx 38/139 DS11758 Rev 6 IDYN_V CC D Dynamic I/O current for VERY STRONG configuration CL =25pF, VDD =5.0 V ± 10% —— 62 mA CL =50pF, VDD =5.0 V ± 10% —— 70 CL =25pF, VDD =3.3 V ± 10% —— 52 CL =50pF, VDD =3.3 V ± 10% —— 55 1. I/O current consumption specifications for the 4.5 V ≤ VDD_HV_IO ≤ 5.5 V range are valid for VSIO_[VSIO_xx] = 1, and VSIO[VSIO_xx] = 0 for 3.0 V ≤ VDD_HV_IO ≤ 3.6 V. 2. Average consumption in one pad toggling cycle. 3. Stated maximum values represent peak consumption that lasts only a few ns during I/O transition. When possible (timed output) it is recommended to delay transition between pads by few cycles to reduce noise and consumption. Table 17. I/O consumption (continued) Symbol C Parameter Conditions Value(1) Unit Min Typ Max |
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