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SPC58EG80C3 数据表(PDF) 89 Page - STMicroelectronics |
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SPC58EG80C3 数据表(HTML) 89 Page - STMicroelectronics |
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89 / 139 page ![]() DS11758 Rev 6 89/139 SPC584Gx, SPC58EGx, SPC58NGx Electrical characteristics 106 Figure 27. DSPI PCS strobe (PCSS) timing (master mode) 4.17.2.1.2 DSPI CMOS master mode — modified timing Note: In the following table, all output timing is worst case and includes the mismatching of rise and fall times of the output pads. PCSx PCSS tPCSC tPASC Table 48. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 # Symbol C Characteristic Condition Value(1) Unit Pad drive(2) Load (CL)Min Max 1tSCK CC D SCK cycle time SCK drive strength Very strong 25 pF 33.0 — ns Strong 50 pF 80.0 — Medium 50 pF 200.0 — 2tCSC CC D PCS to SCK delay SCK and PCS drive strength Very strong 25 pF (N(3) × tSYS(4))–16 — ns Strong 50 pF (N(3) × tSYS(4))–16 — Medium 50 pF (N(3) × tSYS(4))–16 — PCS medium and SCK strong PCS = 50 pF SCK = 50 pF (N(3) × tSYS(4))–29 — 3tASC CC D After SCK delay SCK and PCS drive strength Very strong PCS = 0 pF SCK = 50 pF (M(5) × tSYS(4))– 35 — ns Strong PCS = 0 pF SCK = 50 pF (M(5) × tSYS(4))– 35 — Medium PCS = 0 pF SCK = 50 pF (M(5) × tSYS(4))– 35 — PCS medium and SCK strong PCS = 0 pF SCK = 50 pF (M(5) × tSYS(4))– 35 — |
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