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STM32H7B3AI 数据表(PDF) 114 Page - STMicroelectronics |
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STM32H7B3AI 数据表(HTML) 114 Page - STMicroelectronics |
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114 / 238 page  6.3.12 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 130 °C unless otherwise specified. The devices are shipped to customers with the flash memory erased. Table 57. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Word program - 2.5 4 mA Sector erase - 1.8 3 Mass erase - 2.0 3 Table 58. Flash memory programming Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Word program time 128 bits (user area) - - 20 µs 16 bits (OTP area) - - 20 tERASE8KB Sector erase time (8 Kbytes) - - - 2.2 ms tME Singe-bank mass erase time - - 10 Dual-bank mass erase time - - 10 Vprog Programming voltage 1.62 - 3.6 V 1. Guaranteed by characterization results. Table 59. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) NEND Endurance TJ = –40 to +130 °C 10 kcycles tRET Data retention 1 kcycle at TA = 85 °C 30 Years - 10 kcycles at TA = 55 °C 20 1. Guaranteed by characterization results. STM32H7B3xI Operating conditions DS13139 - Rev 8 page 114/238 |
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