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STM32H7B3AI 数据表(PDF) 116 Page - STMicroelectronics

部件名 STM32H7B3AI
功能描述  32-bit Arm® Cortex®-M7 280 MHz MCUs, 2-Mbyte flash memory, 1.4-Mbyte RAM, 46 com. and analog interfaces, SMPS, crypto
PDF  238 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32H7B3AI 数据表(HTML) 116 Page - STMicroelectronics

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Table 61. EMI characteristics for fHSE = 8 MHz and fHCLK = 64 MHz
Symbol Parameter
Conditions
Monitored frequency band Value
Unit
SEMI
Peak(1)
VDD = 3.6 V, TA = 25 °C, LQFP64 package, compliant with IEC 61967-2
0.1 to 30 MHz
7
dBµV
30 to 130 MHz
–1
130 MHz to 1 GHz
8
1 GHz to 2 GHz
7
Level(2)
0.1 GHz to 2 GHz
2.5
-
1. Refer to the EMI radiated test chapter of application note AN1709 "EMC design guide for STM8, STM32 and Legacy MCUs" available from
the ST website www.st.com..
2. Refer to the EMI level classification chapter of application note AN1709 "EMC design guide for STM8, STM32 and Legacy MCUs" available
from the ST website www.st.com.
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to
determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each sample according to
each pin combination. This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESDA/JEDEC JS-002
standards.
Table 62. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C conforming to ANSI/ESDA/
JEDEC JS-001
Packages with SMPS
1C
1000(2)
V
Packages without
SMPS
2
2000
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = +25 °C conforming to ANSI/ESDA/
JEDEC JS-002
All LQFP packages
and WLCSP
C1
250
All BGA packages
C2a
500
1. Guaranteed by characterization results.
2. The electrostatic discharge is 2000 V for all pins, except VFBSMPS, for which the test fails at 2000 V and passes at 1600 V.
Static latchup
Two complementary static tests are required on six parts to assess the latchup performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.
Table 63. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latchup class
TJ= +130 °C, conforming to JESD78
II level A
STM32H7B3xI
Operating conditions
DS13139 - Rev 8
page 116/238



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