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GD32F310 数据表(PDF) 47 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32F310 数据表(HTML) 47 Page - GigaDevice Semiconductor (Beijing) Inc. |
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47 / 81 page ![]() GD32F310xx Datasheet 46 Peripherials(3) Typical consumption(1) Unit GPIOD 0.10 GPIOC 0.13 GPIOB 0.13 GPIOA 0.13 APB2 TIMER16 0.24 TIMER15 0.24 TIMER14 0.31 USART0 0.41 TIMER0 0.50 SPI0 0.19 ADC(2) 0.91 APB1 PMU 0.31 I2C1 0.17 I2C0 0.17 USART1 0.15 SPI1 0.12 WWDGT 0.11 TIMER13 0.15 TIMER2 0.29 I2S0 0.17 (1) Based on characterization, not tested in production. (2) System clock = fHCLK = 72 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, fADCCLK = fAPB2/2, ADCON bit is set to 1. (3) If there is no other description, then HXTAL = 8 MHz, System clock = fHCLK = 72 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK. 4.4 EMC characteristics EMS (electromagnetic susceptibility) includes ESD (Electrostatic discharge, positive and negative) and FTB (Burst of Fast Transient voltage, positive and negative) testing result is given in Table 4-9. EMS characteristics(1), based on the EMS levels and classes compliant with IEC 61000 series standard. Table 4-9. EMS characteristics(1) Symbol Parameter Conditions Level/Class VESD Voltage applied to all device pins to induce a functional disturbance VDD = 3.3 V, TA = 25 °C, LQFP48, fHCLK = 72 MHz conforms to IEC 61000-4-2 3A VFTB Fast transient voltage burst applied to induce a functional disturbance through 100 pF on VDD and VSS pins VDD = 3.3 V, TA = 25 °C, LQFP48, fHCLK = 72 MHz conforms to IEC 61000-4-4 3A (1) Based on characterization, not tested in production. EMI (Electromagnetic Interference) emission test result is given in the Table 4-10. EMI |
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