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GD32F310 数据表(PDF) 54 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32F310 数据表(HTML) 54 Page - GigaDevice Semiconductor (Beijing) Inc. |
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54 / 81 page ![]() GD32F310xx Datasheet 53 Symbol Parameter Conditions Min Typ Max Unit DIRC48M(2) IRC48M oscillator duty cycle VDD = VDDA = 3.3 V 45 50 55 % IDDAIRC48M(1) IRC48M oscillator operating current VDD = VDDA = 3.3 V — 238 — μA tSUIRC48M(1) IRC48M oscillator startup time VDD = VDDA = 3.3 V — 1.3 — μs (1) Based on characterization, not tested in production. (2) Guaranteed by design, not tested in production. 4.9 PLL characteristics Table 4-22. PLL characteristics Symbol Parameter Conditions Min Typ Max Unit fPLLIN(1) PLL input clock frequency — 1 — 25 MHz fPLLOUT(2) PLL output clock frequency — 16 — 72 MHz fVCO(2) PLL VCO output clock frequency — — — 72 MHz tLOCK(2) PLL lock time — — — 300 μs IDDA(1) (3) Current consumption on VDDA VCO freq = 72 MHz — 210 — μA JitterPLL(4) Cycle to cycle Jitter (rms) System clock — 32.1 — ps Cycle to cycle Jitter (peak to peak) — 255.6 — (1) Based on characterization, not tested in production. (2) Guaranteed by design, not tested in production. (3) System clock = IRC8M = 8 MHz, fPLLOUT = 72 MHz. (4) Value given with main PLL running. 4.10 Memory characteristics Table 4-23 Flash memory characteristics(1) Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit PECYC Number of guaranteed program /erase cycles before failure (Endurance) — 100 — — kcycles tREAD Read time at code flash area — 1 — hclks Read time at data flash area 56 — 3536 tRET Data retention time — — 20 — years tPROG Word programming time TA range(2) — 37.5 86 μs tERASE Page erase time — 45 300 ms tMERASE(64KB) Mass erase time — 0.5 1.6 s (1) Guaranteed by design and/or characterization, not 100% tested in production . |
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