GD32F310 datasheet(50/81 Pages) GIGADEVICE

50 / 81 page

GD32F310xx Datasheet

(LU) test is based on the two measurement methods.

Table 4-12. ESD characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = 25 °C;

JS-001-2017

—

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = 25 °C;

JS-002-2018

—

500

(1)

Based on characterization, not tested in production.

Table 4-13. Static latch-up characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I-test

TA = 25 °C; JESD78D

—

200

Vsupply over voltage

—

5.4

(1)

Based on characterization, not tested in production.

4.7

External clock characteristics

Table 4-14. High speed external clock (HXTAL) generated from a crystal/ceramic

characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHXTAL(1)

Crystal or ceramic frequency

2.6 V ≤ VDD ≤ 3.6 V

MHz

RF(2)

Feedback resistor

VDD = 3.3 V

—

400

—

kΩ

CHXTAL(2)(3)

Recommended matching

capacitance on OSCIN and

OSCOUT

—

Ducy(HXTAL)(2)

Crystal or ceramic duty cycle

—

gm(2)

Oscillator transconductance

Startup

—

mA/V

IDD(HXTAL)(1)

Crystal or ceramic operating

current

VDD = 3.3 V, fHCLK =

fIRC8M = 8 MHz

TA = 25 °C

—

1.1

—

tSUHXTAL(1)

Crystal or ceramic startup time

VDD = 3.3 V, fHCLK =

fIRC8M = 8 MHz

TA = 25 °C

—

1.4

—

(1)

Based on characterization, not tested in production.

(2)

Guaranteed by design, not tested in production.

(3)

CHXTAL1 = CHXTAL2 = 2*(CLOAD - CS), For CHXTAL1 and CHXTAL2, it is recommended matching capacitance on OSCIN

and OSCOUT. For CLOAD, it is crystal/ceramic load capacitance, provided by the crystal or ceramic

manufacturer. For CS, it is PCB and MCU pin stray capacitance.

Table 4-15. High speed external user clock characteristics (HXTAL in bypass mode)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHXTAL_ext(1)

External clock source or oscillator

frequency

VDD = 3.3 V

MHz

GD32F310 数据表(PDF) 50 Page - GigaDevice Semiconductor (Beijing) Inc.

GD32F310 数据表(HTML) 50 Page - GigaDevice Semiconductor (Beijing) Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81

数据表下载

链接网址

GD32F310 数据表(PDF) 50 Page - GigaDevice Semiconductor (Beijing) Inc.

GD32F310 数据表(HTML) 50 Page - GigaDevice Semiconductor (Beijing) Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81

数据表 下载

链接网址

数据表下载