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GD32F310 数据表(PDF) 52 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32F310 数据表(HTML) 52 Page - GigaDevice Semiconductor (Beijing) Inc. |
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52 / 81 page ![]() GD32F310xx Datasheet 51 Symbol Parameter Conditions Min Typ Max Unit frequency VLXTALH(2) OSC32IN input pin high level voltage — 0.7 VDD — VDD V VLXTALL(2) OSC32IN input pin low level voltage — VSS — 0.3 VDD tH/L(LXTAL) (2) OSC32IN high or low time — 450 — — ns tR/F(LXTAL) (2) OSC32IN rise or fall time — — — 50 CIN(2) OSC32IN input capacitance — — 5 — pF Ducy(LXTAL) (2) Duty cycle — 30 50 70 % (1) Based on characterization, not tested in production. (2) Guaranteed by design, not tested in production. 4.8 Internal clock characteristics Table 4-18. High speed internal clock (IRC8M) characteristics Symbol Parameter Conditions Min Typ Max Unit fIRC8M High Speed Internal Oscillator (IRC8M) frequency VDD = VDDA = 3.3 V — 8 — MHz ACCIRC8M IRC8M oscillator Frequency accuracy, Factory-trimmed VDD = VDDA = 3.3 V, TA = -40 °C ~ +85 °C for grade 6 devices — -0.62 to 0.46(1) — % VDD = VDDA = 3.3 V, TA = -40 °C ~ +105 °C for grade 7 devices — -0.7 to 0.46(1) — VDD = VDDA = 3.3 V, TA = 25 °C -1.0 — +1.0 IRC8M oscillator Frequency accuracy, User trimming step(1) — — 0.5 — % DucyIRC8M(2 ) IRC8M oscillator duty cycle VDD = VDDA = 3.3 V 45 50 55 % IDDAIRC8M(1) IRC8M oscillator operating current VDD = VDDA = 3.3 V — 58 — μA tSUIRC8M(1) IRC8M oscillator startup time VDD = VDDA = 3.3 V — 1.2 — μs (1) Based on characterization, not tested in production. (2) Guaranteed by design, not tested in production. Table 4-19. Low speed internal clock (IRC40K) characteristics Symbol Parameter Conditions Min Typ Max Unit fIRC40K(1) Low Speed Internal oscillator (IRC40K) frequency VDD = VDDA = 3.3 V — 40 — kHz |
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