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ST92F120JR9T 数据表(PDF) 296 Page - STMicroelectronics

部件名 ST92F120JR9T
功能描述  8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD
PDF  320 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST92F120JR9T 数据表(HTML) 296 Page - STMicroelectronics

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ST92F120 - ELECTRICAL CHARACTERISTICS
FLASH / EEPROM SPECIFICATIONS
(VDD =5V ± 10%, TA = –40°C to +105°C, unless otherwise specified) (1)
Note:
(1) The full range of characteristics will be available after final product characterisation.
(2) Relationship computation between EEPRO M sector cycling and single byte cycling is provided in a dedicated STMicroelectronics Appli-
cation Note (ref. AN1102/98).
FLASH / EEPROM DC & AC CHARACTERISTICS
(VDD =5V ± 10%, TA = –40°C to +105°C, unless otherwise specified)
Note:
(1) Below the min value the FLASH / EEPROM can never be written; above the max value FLASH/EEPROM can always be writ ten.
(2) Below the min value the FLASH / EEPROM can never be read; above the max value FLASH/EEPRO M can always be read.
Parameter
Min
Typ
Max
Unit
MAIN FLASH
Byte Program
10
1200
µs
128 kbytes Flash Program
1.3
s
64 kbytes Flash Sector Erase
1
1.5
30
s
128 kbytes Flash Chip Erase
3
s
Erase Suspend Latency
15
µs
EEPROM
16 bytes Page Update
(1k EEPROM)
0.16
30
100
ms
16 bytes Page Update
(0.5k EEPROM)
0.16
15
50
ms
EEPROM Chip Erase
70
ms
RELIABILITY
Flash Endurance 25
°C
10000
cycles
Flash Endurance -40
°C +105°C
3000
EEPROM Endurance
100000 (2)
cycles / sector
Data Retention
15
Years
Symbol
Parameter
Test Conditions
Min
Max
Unit
VCWL
Write Lock Supply Voltage (1)
34
V
VCRL
Read Lock Supply Voltage (2)
1.5
2.5
V
IDD1
Supply Current (Read)
VDD = 5.5 V, TA = –40°C,
fINTCLK = 24 MHz
60
mA
IDD2
Supply Current (Write)
VDD = 5.5 V, TA =–40°C,
fINTCLK = 24 MHz
60
mA
IDD3
Supply Current (Stand-by)
VDD = 5.5 V, TA = –40°C
100
µA
IDD4
Supply Current (Power-Down)
VDD = 5.5 V, TA = 105°C10
µA
TPD
Recovery from Power-Down
VDD = 4.5 V, TA = 105°C10
µs
1



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