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ST92F120JR9T 数据表(PDF) 48 Page - STMicroelectronics |
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ST92F120JR9T 数据表(HTML) 48 Page - STMicroelectronics |
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48 / 320 page ![]() 48/320 ST92F120 - SINGLE VOLTAGE FLASH & EEPROM REGISTER DESCRIPTION (Cont’d) When in Erase Suspend the memory accepts only the following operations: Read, Erase Resume and Byte Program. Updating the EEPROM memo- ry is not possible during a Flash Erase Suspend. The FSUSP bit must be reset (and FWMS must be set again) to resume a suspended Sector Erase operation. 0: Resume sector erase when FWMS is set again. 1: Suspend Sector erase Bit 1 = PROT: Set Protection (Read/Write). This bit must be set to select the Set Protection op- eration. The Set Protection operation allows “0”s in place of “1”s to be programmed in the four Non Volatile Protection registers. From 1 to 4 bytes can be entered (in any order, no need for an ordered address sequence) before starting the execution by setting the FWMS bit . Data to be programmed and addresses in which to program must be pro- vided (through an LD instruction, for example). Protection contained in addresses that are not en- tered are left unchanged. This bit is automatically reset at the end of the Set Protection operation. 0: Deselect protection 1: Select protection Bit 0 = FBUSY: Flash Busy (Read Only). This bit is automatically set during Page Program, Byte Program, Sector Erase or Set Protection op- erations when the first address to be modified is latched in Flash memory, or during Chip Erase op- eration when bit FWMS is set. When this bit is set every read access to the Flash memory will output invalid data (FFh equivalent to a NOP instruction), while every write access to the Flash memory will be ignored. At the end of the write operations or during a Sector Erase Suspend this bit is automat- ically reset and the memory returns to read mode. After an Erase Resume this bit is automatically set again. If the two EEPROM sectors E0 and E1 are used instead of the embedded hardware emula- tion, FBUSY remains low during a modification in those sectors (while EBUSY rises), so that reading in Flash memory remains possible. The FBUSY bit remains high for a maximum of 10 µs after Power- Up and when exiting Power-Down mode, meaning that the Flash memory is not yet ready to be ac- cessed. 0: Flash not busy 1: Flash busy EEPROM CONTROL REGISTER (ECR) Address: 224001h - Read/Write Reset value: 000x x000 (xxh) The EEPROM Control Register is used to enable all the operations for the EEPROM memory in de- vices with EEPROM hardware emulation. The ECR also contains two bits (WFIS and FEIEN) that are related to both Flash and EEPROM mem- ories. Bit 7 = EWMS: EEPROM Write Mode Start. This bit must be set to start every write/erase oper- ation in the EEPROM memory. At the end of the write/erase operation this bit is automatically reset. Resetting by software this bit does not stop the current write operation. 0: No effect 1: Start EEPROM write Bit 6 = EPAGE: EEPROM page update. This bit must be set to select the Page Update op- eration in EEPROM memory. The Page Update operation allows to write a new content: both “0”s in place of “1”s and “1”s in place of “0”s. From 1 to 16 bytes can be entered (in any order, no need for an ordered address sequence) before starting the execution by setting bit EWMS. All the addresses must belong to the same page (only the 4 LSBs of address can change). Data to be programmed and addresses in which to program must be provided (through an LD instruction, for example). Data contained in page addresses that are not entered are left unchanged. This bit is automatically reset at the end of the Page Update operation. 0: Deselect page update 1: Select page update Bit 5 = ECHIP: EEPROM chip erase. This bit must be set to select the Chip Erase oper- ation in the EEPROM memory. The Chip Erase operation allows to erase all the EEPROM loca- tions to (E0 and E1 sectors) FFh. The execution starts by setting bit EWMS. This bit is automatical- ly reset at the end of the Chip Erase operation. 0: Deselect chip erase 1: Select chip erase Bit 4:3 = Reserved. 765 4 3 2 1 0 EWM S EPAG E ECHI P WFIS FEIE N EBUS Y 9 |
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