 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
ST92F120JR9T 数据表(PDF) 52 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ST92F120JR9T 数据表(HTML) 52 Page - STMicroelectronics |
|
|
52 / 320 page  52/320 ST92F120 - SINGLE VOLTAGE FLASH & EEPROM 3.4 WRITE OPERATION EXAMPLE Each operation (both Flash and EEPROM) is acti- vated by a sequence of instructions like the follow- ing: OR CR, #OPMASK ;Operation selection LD ADD1, #DATA1 ;1st Add and Data LD ADD2, #DATA2 ;2nd Add and Data .. ...., ...... LD ADDn, #DATAn ;nth Add and Data ;n range = (1 to 16) OR CR, #80h ;Operation start The first instruction is used to select the desired operation by setting its corresponding selection bit in the Control Register (FCR for Flash operations, ECR for EEPROM operations). The load instructions are used to set the address- es (in the Flash or in the EEPROM memory space) and the data to be modified. The last instruction is used to start the write oper- ation, by setting the start bit (FWMS for Flash op- erations, EWMS for EEPROM operation) in the Control register. Once selected, but not yet started, one operation can be cancelled by resetting the operation selec- tion bit. Any latched address and data will be reset. Warning: during the Flash Page Program or the EEPROM Page Update operation it is forbidden to change the page address: only the last page ad- dress is effectively kept and all programming will effect only that page. A summary of the available Flash and EEPROM write operations (including the Flash Write Opera- tions on the EEPROM sectors when the EEPROM Hardware Emulation is not used) are shown in the following tables: Table 11. Flash Write Operations Table 12. EEPROM Write Operations Operation Selection bit Addresses and Data Start bit Typical Duration Byte Program FBYTE 1 byte FWMS 10 µs Page Program FPAGE From 1 to 16 bytes FWMS 160 µs (16 bytes) Sector Erase FSECT From 1 to 4 sectors FWMS 1.5 s (1 sector) Sector Erase Suspend FSUSP None None 15 µs Chip Erase FCHIP None FWMS 3 s Set Protection PROT From 1 to 4 bytes FWMS 40 µs (4 bytes) Operation Selection bit Addresses and Data Start bit Typical Duration Page Update EPAGE From 1 to 16 bytes EWMS 30 ms Chip Erase ECHIP None EWMS 70 ms Table 13. Flash Write Operations on EEPROM sectors Operation Selection bit Addresses and Data Start bit Typical Duration Byte Program FBYTE 1 byte EWMS 10 µs Page Program FPAGE From 1 to 16 bytes EWMS 160 µs (16 bytes) Sector Erase FSECT 1 sector EWMS 70 ms Sector Erase Suspend FSUSP None None 15 µs 9 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
