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ADE75 数据表(PDF) 104 Page - Analog Devices

部件名 ADE75
功能描述  Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver
PDF  148 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADE75 数据表(HTML) 104 Page - Analog Devices

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ADE75xx/ADE71xx
Preliminary Technical Data
Rev. PrE | Page 104 of 148
flash memory. Upon completion of the flash memory operation,
the FLSHKY register is reset such that it must be written prior
to another flash memory operation. Requiring the key to be set
before an access to the flash memory decreases the likelihood of
user code or data being overwritten by a program that has run
amuck.
The program counter, PC, is held on the instruction where the
ECON register is written to until the flash memory controller is
done performing the requested operation. Then the PC
increments to continue with the next instruction. Any
interrupts requests that occur while the flash controller is
performing an operation are not handled until the flash
operation is complete. All peripherals, such as timers and
counters, will continue to operate as configured throughout the
flash memory access.
Table 87. Flash Control SFR (ECON, 0xB9)
Bit
Location
Bit
Mnemonic
Default
Value
Description
7-0
ECON
0
1
Write byte: The value in EDATA is written to the Flash memory, at
the page address given by EADRH and EARDL. Note that the byte
being addressed must be pre-erased
2
Erase page: A 512-byte page of Flash memory address is erased.
The page is selected by the address in EADRH/L. Any address in
the page can be written to EADRH/L to select it for erasure.
3
Erase all: All 16 or 32kbytes of the Flash memory are erased.
Note: This command is used during serial and parallel download
modes but should not be executed by user code.
4
Read byte: The byte in the Flash memory, addressed by
EADRH/L, is read into EDATA.
5
Erase page and write byte: The page that holds the byte
addressed by EADRH/L is erased. Then, data in EDATA is written
to the byte of flash memory addressed by EADRH/L.
8
Protect code: See Protecting the Flash.
Table 88. Flash Key SFR (FLSHKY, 0xBA)
Bit
Location
Bit
Mnemonic
Default
Value
Description
7-0
FLSHKY
0xFF
The content of this SFR is compared to the Flash key – 0x3B. If the two
values match the next ECON operation is allowed - see Protecting the
Flash.
Table 89. Flash Protection Key SFR (PROTKY, 0xBB)
Bit
Location
Bit
Mnemonic
Default
Value
Description
7-0
PROTKY
0xFF
The content of this SFR is compared to the Flash memory location at
address 0x3FFA. If the two values match, the update of the Write/Erase
and Read protection set up is allowed - see Protecting the Flash.
If the protection Key in the flash is 0xFF, PROTKY SFR value is not used for
comparison. The PROTKY SFR is also used to write the protection key in
the flash. This is done by writing the desired value in PROTKY and write
0x08 in the ECON SFR. This operation can only be done once.
Table 90. Flash Data SFR (EDATA, 0xBC)
Bit
Location
Bit
Mnemonic
Default
Value
Description
7-0
EDATA
0
Flash pointer data
Table 91. Flash Write/Erase Protection 0 SFR (PROTB0, 0xBD)
Bit
Bit
Default
Description



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