ADE75 datasheet(106/148 Pages) AD

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ADE75xx/ADE71xx

Preliminary Technical Data

Rev. PrE | Page 106 of 148

EADRL.4: Page 20

EADRL.3: Page 19

EADRL.2: Page 18

EADRL.1: Page 17

EADRL.0: Page 16

Table 95. Flash High Byte Address SFR (EADRH, 0xC7)

Bit

Location

Bit

Mnemonic

Default

Value

Description

7-0

EADRH

Flash pointer high byte address

This SFR is also used to write the write/erase protection bits for pages 24

to 31 of the Flash memory – see Protecting the Flash. Clearing the bit

enables the protection.

EADRH.7: Page 31

EADRH.6: Page 30

EADRH.5: Page 29

EADRH.4: Page 28

EADRH.3: Page 27

EADRH.2: Page 26

EADRH.1: Page 25

EADRH.0: Page 24

Flash functions

Sample 8051 code is provided below to demonstrate how to use

the Flash functions. For these examples, the byte of flash

memory, 0x3C00 is accessed.

Write Byte:

Write F3H into flash memory byte 0x3C00.

MOV EDATA, #F3h

; Data to be written

MOV EADRH, #3Ch

; Setup byte address

MOV EADRL, #00h

MOV FLSHKY, #3Bh

; Write Flash security key.

MOV ECON, #01H

; Write Byte

Erase Page:

Erase the page containing flash memory byte

0x3C00.

MOV EADRH, #3Ch

; Select page through byte address

MOV EADRL, #00h

MOV FLSHKY, #3Bh

; Write Flash security key.

MOV ECON, #02H

; Erase Page

Erase All:

Erase all of the 16 or 32kbyte flash memory

MOV FLSHKY, #3Bh

; Write Flash security key.

MOV ECON, #03H

; Erase All

Read Byte:

Read flash memory byte 0x3C00.

MOV EADRH, #3Ch

; Setup byte address

MOV EADRL, #00h

MOV FLSHKY, #3Bh

; Write Flash security key.

MOV ECON, #04H

; Read Byte

; Data is ready in EDATA register

Erase Page and Write Byte:

Erase the page containing flash

memory byte 0x3C00 and then write F3H to that address. Note

that the other 511 bytes in this page will be erased.

MOV EDATA, #F3h

; Data to be written

MOV EADRH, #3Ch

; Setup byte address

MOV EADRL, #00h

MOV FLSHKY, #3Bh

; Write Flash security key.

MOV ECON, #05H

; Erase page and then write byte

PROTECTING THE FLASH

Two forms of protection are offered for this flash memory: read

protection and write/erase protection. The read protection

ensures that any pages that are read protected will not be able to

be read by the end user. The write protection ensures that the

flash memory cannot be erased or written over. This protects

the end system from tampering and can prevent the code from

being overwritten in the event of a runaway program.

Write/erase protection is individually selectable for all of the 16

or 32 pages. Read protection is selected in groups of 4 pages. See

Figure 66 for the groupings. The protection bits are stored in the

last flash memory locations, addresses 0x3FFA through

0x3FFF– see Figure 68. 4 bytes are reserved for write/erase

protection, 1 byte for read protection and another byte to set the

protection security key. The user must enable write/erase

protection for the last page at a minimum for the entire

protection scheme to work.

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