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H8/3003 数据表(PDF) 166 Page - Renesas Technology Corp |
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H8/3003 数据表(HTML) 166 Page - Renesas Technology Corp |
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166 / 715 page  2 CAS and 2WE Modes: The CAS/WE bit in RFSHCR can select two control modes for 16-bit- wide DRAM: one using UCAS and LCAS; the other using UW and LW. These DRAM pins correspond to H8/3003 pins as shown in table 7-6. Table 7-6 DRAM Pins and H8/3003 Pins DRAM Pin H8/3003 Pin CAS/ WE = 0 (2WE mode) CAS/ WE = 1 (2CAS mode) HWR UW UCAS LWR LW LCAS RD CAS WE CS3 RAS RAS Figure 7-5 (1) shows the interface timing for 2 WE DRAM. Figure 7-5 (2) shows the interface timing for 2 CAS DRAM. Figure 7-5 DRAM Control Signal Output Timing (1) (2 WE Mode) ø ( ) CS RAS 3 ( ) RD CAS ( ) HWR UW ( ) LWR LW RFSH AS Read cycle Write cycle Refresh cycle * Row Column Row Column Area 3 top address Note: 16-bit access * Address bus 148 |
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