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MPC8640DEC 数据表(PDF) 19 Page - Freescale Semiconductor, Inc |
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MPC8640DEC 数据表(HTML) 19 Page - Freescale Semiconductor, Inc |
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19 / 140 page ![]() MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 1 Freescale Semiconductor 19 DDR and DDR2 SDRAM Table 13 provides the DDR2 capacitance when Dn_GV DD(typ) = 1.8 V. Table 12. DDR2 SDRAM DC Electrical Characteristics for D n_GVDD(typ) = 1.8 V Parameter/Condition Symbol Min Max Unit Notes I/O supply voltage D n_GVDD 1.71 1.89 V 1 I/O reference voltage D n_MVREF 0.49 × Dn_GVDD 0.51 × Dn_GVDD V2 I/O termination voltage VTT D n_MVREF –0.0 4 D n_MVREF + 0.04 V 3 Input high voltage VIH D n_MVREF+0.1 25 D n_GVDD +0.3 V Input low voltage VIL –0.3 D n_MVREF – 0.125 V Output leakage current IOZ –50 50 μA4 Output high current (VOUT = 1.420 V) IOH –13.4 — mA Output low current (VOUT = 0.280 V) IOL 13.4 — mA Notes: 1. D n_GVDD is expected to be within 50 mV of the DRAM Dn_GVDD at all times. 2. D n_MVREF is expected to be equal to 0.5 × Dn_GVDD, and to track Dn_GVDD DC variations as measured at the receiver. Peak-to-peak noise on D n_MVREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to D n_MVREF. This rail should track variations in the DC level of Dn_MVREF. 4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ Dn_GVDD. Table 13. DDR2 SDRAM Capacitance for D n_GVDD(typ)=1.8 V Parameter/Condition Symbol Min Max Unit Notes Input/output capacitance: DQ, DQS, DQS CIO 68 pF 1 Delta input/output capacitance: DQ, DQS, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. D n_GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = Dn_GVDD/2, VOUT (peak-to-peak) = 0.2 V. |
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