MPC8640DEC datasheet(20/140 Pages) FREESCALE

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MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 1

Freescale Semiconductor

DDR and DDR2 SDRAM

Table 14 provides the recommended operating conditions for the DDR SDRAM component(s) when

Dn_GVDD(typ) = 2.5 V.

Table 15 provides the DDR capacitance when Dn_GV

DD (typ)=2.5 V.

Table 16 provides the current draw characteristics for MVREF.

Table 14. DDR SDRAM DC Electrical Characteristics for D

n_GVDD (typ) = 2.5 V

Parameter/Condition

Symbol

Min

Max

Unit

Notes

I/O supply voltage

n_GVDD

2.375

2.625

I/O reference voltage

n_MVREF

0.49

× Dn_GVDD

0.51

× Dn_GVDD

I/O termination voltage

VTT

n_MVREF – 0.04

n_MVREF + 0.04

Input high voltage

VIH

n_MVREF + 0.15

n_GVDD + 0.3

Input low voltage

VIL

–0.3

n_MVREF– 0.15

Output leakage current

IOZ

–50

μA4

Output high current (VOUT = 1.95 V)

IOH

–16.2

—

Output low current (VOUT = 0.35 V)

IOL

16.2

—

Notes:

1. D

n_GVDD is expected to be within 50 mV of the DRAM Dn_GVDD at all times.

2. MVREF is expected to be equal to 0.5 × Dn_GVDD, and to track Dn_GVDD DC variations as measured at the receiver.

Peak-to-peak noise on D

n_MVREF may not exceed ±2% of the DC value.

3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be

equal to D

n_MVREF. This rail should track variations in the DC level of Dn_MVREF.

4. Output leakage is measured with all outputs disabled, 0 V

≤ VOUT ≤ Dn_GVDD.

Table 15. DDR SDRAM Capacitance for D

n_GVDD (typ) = 2.5 V

Parameter/Condition

Symbol

Min

Max

Unit

Notes

Input/output capacitance: DQ, DQS

CIO

Delta input/output capacitance: DQ, DQS

CDIO

—0.5

Note:

1. This parameter is sampled. D

n_GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = Dn_GVDD/2,

VOUT (peak-to-peak) = 0.2 V.

Table 16. Current Draw Characteristics for MVREF

Parameter / Condition

Symbol

Min

Max

Unit

Note

Current draw for MVREF

IMVREF

—500

μA1

1. The voltage regulator for MVREF must be able to supply up to 500 μA current.

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