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MPC8544E 数据表(PDF) 18 Page - Freescale Semiconductor, Inc

部件名 MPC8544E
功能描述  MPC8544E PowerQUICC III Integrated Processor Hardware Specifications
PDF  117 Pages
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MPC8544E 数据表(HTML) 18 Page - Freescale Semiconductor, Inc

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MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
18
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 13 provides the DDR I/O capacitance when GVDD(typ) = 2.5 V.
Table 14 provides the current draw characteristics for MVREF.
6.2
DDR SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR SDRAM interface.
6.2.1
DDR SDRAM Input AC Timing Specifications
Table 15 provides the input AC timing specifications for the DDR SDRAM when GVDD(typ) = 1.8 V.
Output leakage current
IOZ
–50
50
μA4
Output high current (VOUT = 1.8 V)
IOH
–16.2
mA
Output low current (VOUT = 0.42 V)
IOL
16.2
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
V
OUT GVDD.
Table 13. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 14. Current Draw Characteristics for MVREF
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Current draw for MVREF
IMVREF
—500
μA1
Note:
1. The voltage regulator for MVREF must be able to supply up to 500 μA current.
Table 15. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface
At recommended operating conditions.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—MVREF – 0.25
V
AC input high voltage
VIH
MVREF + 0.25
V
Table 12. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V (continued)
Parameter/Condition
Symbol
Min
Max
Unit
Notes



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