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MPC8544E 数据表(PDF) 18 Page - Freescale Semiconductor, Inc |
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MPC8544E 数据表(HTML) 18 Page - Freescale Semiconductor, Inc |
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18 / 117 page ![]() MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5 18 Freescale Semiconductor DDR and DDR2 SDRAM Table 13 provides the DDR I/O capacitance when GVDD(typ) = 2.5 V. Table 14 provides the current draw characteristics for MVREF. 6.2 DDR SDRAM AC Electrical Characteristics This section provides the AC electrical characteristics for the DDR SDRAM interface. 6.2.1 DDR SDRAM Input AC Timing Specifications Table 15 provides the input AC timing specifications for the DDR SDRAM when GVDD(typ) = 1.8 V. Output leakage current IOZ –50 50 μA4 Output high current (VOUT = 1.8 V) IOH –16.2 — mA — Output low current (VOUT = 0.42 V) IOL 16.2 — mA — Notes: 1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times. 2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise on MVREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to MVREF. This rail should track variations in the DC level of MVREF. 4. Output leakage is measured with all outputs disabled, 0 V ≤ V OUT ≤ GVDD. Table 13. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V Parameter/Condition Symbol Min Max Unit Notes Input/output capacitance: DQ, DQS CIO 68 pF 1 Delta input/output capacitance: DQ, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V. Table 14. Current Draw Characteristics for MVREF Parameter/Condition Symbol Min Max Unit Notes Current draw for MVREF IMVREF —500 μA1 Note: 1. The voltage regulator for MVREF must be able to supply up to 500 μA current. Table 15. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface At recommended operating conditions. Parameter Symbol Min Max Unit Notes AC input low voltage VIL —MVREF – 0.25 V — AC input high voltage VIH MVREF + 0.25 — V — Table 12. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V (continued) Parameter/Condition Symbol Min Max Unit Notes |
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