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USB3320 数据表(PDF) 14 Page - Microchip Technology

部件名 USB3320
功能描述  Highly Integrated Full Featured Hi-Speed USB 2.0 ULPI Transceiver
PDF  70 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

USB3320 数据表(HTML) 14 Page - Microchip Technology

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USB3320
DS00001792B-page 14
 2014-2015 Microchip Technology Inc.
4.6
Dynamic Characteristics: Analog I/O Pins
4.7
OTG Electrical Characteristics
TABLE 4-6:
DYNAMIC CHARACTERISTICS: ANALOG I/O PINS (DP/DM)
Parameter
Symbol
Condition
MIN
TYP
MAX
Units
FS Output Driver Timing
FS Rise Time
TFR
CL = 50pF; 10 to 90% of
|VOH - VOL|
420
ns
FS Fall Time
TFF
CL = 50pF; 10 to 90% of
|VOH - VOL|
420
ns
Output Signal Crossover
Voltage
VCRS
Excluding the first transition
from IDLE state
1.3
2.0
V
Differential Rise/Fall Time
Matching
TFRFM
Excluding the first transition
from IDLE state
90
111.1
%
LS Output Driver Timing
LS Rise Time
TLR
CL = 50-600pF;
10 to 90% of
|VOH - VOL|
75
300
ns
LS Fall Time
TLF
CL = 50-600pF;
10 to 90% of
|VOH - VOL|
75
300
ns
Differential Rise/Fall Time
Matching
TLRFM
Excluding the first transition
from IDLE state
80
125
%
HS Output Driver Timing
Differential Rise Time
THSR
500
ps
Differential Fall Time
THSF
500
ps
Driver Waveform
Requirements
Eye pattern of Template 1
in USB 2.0 specification
Hi-Speed Mode Timing
Receiver Waveform
Requirements
Eye pattern of Template 4
in USB 2.0 specification
Data Source Jitter and
Receiver Jitter Tolerance
Eye pattern of Template 4
in USB 2.0 specification
TABLE 4-7:
OTG ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Condition
MIN
TYP
MAX
Units
SessEnd trip point
VSessEnd
0.2
0.5
0.8
V
SessVld trip point
VSessVld
0.8
1.4
2.0
V
VbusVld trip point
VVbusVld
4.4
4.58
4.75
V
A-Device Impedance
RIdGnd
Maximum A device
Impedance to ground on ID
pin
100
kΩ
ID Float trip point
VIdFloat
1.9
2.2
2.5
V
VBUS Pull-Up
RVPU
VBUS
to VDD33 Note 4-8
(ChargeVbus = 1)
1.29
1.34
1.45
kΩ
VBUS Pull-down
RVPD
VBUS
to GND Note 4-8
(DisChargeVbus = 1)
1.55
1.7
1.85
kΩ
VBUS Impedance
RVB
VBUS
to GND
40
75
100
kΩ
ID pull-up resistance
RID
IdPullup
= 1
80
100
120
kΩ
ID weak pull-up resistance
RIDW
IdPullup
= 0
1
MΩ
ID pull-dn resistance
RIDPD
IdGndDrv
= 1
1000
Ω



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