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EDB8164B4PR-1DITF-R 数据表(PDF) 146 Page - Micron Technology

部件名 EDB8164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DITF-R 数据表(HTML) 146 Page - Micron Technology

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Table 97: Data Setup and Hold Base Values (>400 MHz, 1 V/ns Slew Rate) (Continued)
Parameter
Data Rate
Reference
1066
933
800
667
533
466
tDH (base)
80
105
140
220
300
320
VIH/VIL(DC) = VREF(DC) ±130mV
Note:
1. AC/DC referenced for 1 V/ns DQ, DM slew rate, and 2 V/ns differential DQS_t/DQS_c slew
rate.
Table 98: Data Setup and Hold Base Values (<400 MHz, 1 V/ns Slew Rate)
Parameter
Data Rate
Reference
400
333
266
200
tDS (base)
180
300
450
700
VIH/VIL(AC) = VREF(DC) ±300mV
tDH (base)
280
400
550
800
VIH/VIL(DC) = VREF(DC) ±200mV
Note:
1. AC/DC referenced for 1 V/ns DQ, DM slew rate, and 2 V/ns differential DQS_t/DQS_c slew
rate.
Table 99: Derating Values for AC/DC-Based tDS/tDH (AC220)
ΔtDS, ΔtDH derating in ps
AC220 Threshold -> VIH(ac)=VREF(dc)+220mV, VIL(ac)=VREF(dc)-220mV
DC130 Threshold -> VIH(dc)=VREF(dc)+130mV, VIL(dc)=VREF(dc)-130mV
DQS_t, DQS_c Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
Δ
ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
DQ, DM
slew
rate
V/ns
2.0
110
65
110
65
110
65
1.5
74
43
73
43
73
43
89
59
1.0
0
0
0
0
00
16
16
32
32
0.9
-3
-5
-3
-5
13
11
29
27
45
43
0.8
-8
-13
8
3
24
19
40
35
56
55
0.7
2
-6
1810342650466678
0.6
10
-3
26
13
42
33
58
65
0.5
4
-4
20163648
0.4
-7
2
17
34
Note:
1. Shaded cells are not supported.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Data Setup, Hold, and Slew Rate Derating
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
146
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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