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M58PR256LE 数据表(PDF) 72 Page - STMicroelectronics

部件名 M58PR256LE
功能描述  256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  119 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58PR256LE 数据表(HTML) 72 Page - STMicroelectronics

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DC and AC parameters
M58PR256LE, M58PR512LE, M58PR001LE
72/119
IPP1
(3)
VPP supply current (program)
VPP = VPPH
822
mA
VPP = VDD
0.05
0.1
mA
VPP supply current (erase)
VPP = VPPH
822
mA
VPP = VDD
0.05
0.1
mA
IPP2
VPP supply current (read)
VPP ≤ VDD
215
µA
IPP3
(3)
VPP supply current (standby,
program/erase suspend)
VPP ≤ VDD
0.2
5
µA
IPP4
VPP supply current (blank check)
VPP = VPPH
0.05
0.1
mA
VPP = VPP1
0.05
0.1
mA
1.
All inputs stable.
2.
The DPD current is measured 40 µs after entering the deep power-down mode.
3.
Sampled only, not 100% tested.
4.
VDD dual operation current is the sum of read and program or erase currents.
Table 28.
DC characteristics - voltages
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
VIL
Input low voltage
0
0.4
V
VIH
Input high voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output low voltage
IOL = 100 µA
0.1
V
VOH
Output high voltage
IOH = –100 µA
VDDQ –0.1
V
VPP1
VPP program voltage-logic
Program, erase
1.1
1.8
3.3
V
VPPH
VPP program voltage factory
Program, erase
8.5
9.0
9.5
V
VPPLK
Program or erase lockout
0.4
V
VLKO
VDD lock voltage
1
V
VRPH
RP pin extended high
voltage
3.3
V
VLKOQ VDDQ lock voltage
0.9
V
Table 27.
DC characteristics - currents (continued)
Symbol
Parameter
Test condition(1)
Typ
Max
Unit



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